Method of manufacturing a semiconductor device using a metal which promotes crystallization of silicon and substrate bonding

A method of manufacturing a semiconductor device comprising the steps of:

• forming a first insulating film on a first substrate having a groove formed in a surface thereof;
• forming a second insulating film on said first insulating film;
• forming an amorphous silicon film on said second insulating film;
• holding a metal element that promotes the crystallization of silicon in contact with a surface of said amorphous silicon film;
• crystallizing said amorphous silicon film through a heat treatment to obtain a crystalline silicon film;
• forming a thin-film transistor using said crystalline silicon film;
• forming a sealing layer that seals said thin-film transistor;
• bonding a second substrate having a translucent property to said sealing layer;
• and
• removing said first insulating film by using an etching solvent to peel off said first substrate.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a first insulating film on a first substrate having a groove formed in a surface thereof;
• forming a second insulating film on said first insulating film;
• forming an amorphous silicon film on said second insulating film;
• holding a metal element that promotes the crystallization of silicon in contact with a surface of said amorphous silicon film;
• crystallizing said amorphous silicon film through a heat treatment to obtain a crystalline silicon film;
• forming a thin-film transistor using said crystalline silicon film;
• forming a sealing layer that seals said thin-film transistor;
• bonding a second substrate having a translucent property to said sealing layer;
• and
• removing said first insulating film by using an etching solvent to peel off said first substrate,
• wherein a gap is defined between a bottom portion of said groove and said first insulating film, and said etching solvent enters said gap.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a first insulating film on a first substrate;
• forming a second insulating film on said first insulating film;
• forming an amorphous silicon film on said second insulating film;
• holding a metal element that promotes the crystallization of silicon in contact with a surface of said amorphous silicon film;
• irradiating a laser beam onto said amorphous silicon film to change a region on which the laser beam is irradiated into a monocrystal-like region or substantially monocrystal-like region;
• forming a thin-film transistor by using the monocrystal-like region or substantially monocrystal-like region as an active layer;
• forming a sealing layer that seals said thin-film transistor;
• bonding a second substrate having a translucent property to said sealing layer;
• and
• removing said first insulating film to peel off said first substrate.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a first insulating film on a first substrate;
• forming a second insulating film on said first insulating film;
• forming an amorphous silicon film on said second insulating film;
• holding a metal element that promotes the crystallization of silicon in contact with a surface of said amorphous silicon film;
• irradiating a laser beam onto said amorphous silicon film to change a region on which the laser beam is irradiated into a region having a crystalline property;
• forming a thin-film transistor by using the region having the crystalline property as an active layer;
• forming a sealing layer that seals said thin-film transistor;
• bonding a second substrate having a translucent property to said sealing layer;
• and
• removing said first insulating film to peel off said first substrate.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a first insulating film on a first substrate comprising quartz;
• forming a second insulating film on said first insulating film;
• forming an amorphous silicon film on said second insulating film;
• providing in contact with a surface of said amorphous silicon film a metal element that promotes the crystallization of silicon;
• crystallizing said amorphous silicon film by heating to obtain a crystalline silicon film;
• subjecting said crystalline silicon film to thermal treatment in an oxidizing atmosphere containing a halogen element to form a thermal oxide film on a surface of said crystalline silicon film and to getter said metal element into said thermal oxide film in order to remove or reduce the metal element present in said crystalline silicon film;
• removing said thermal oxide film;
• forming a thin-film transistor using said crystalline silicon film;
• forming a sealing layer that seals said thin-film transistor;
• bonding a second substrate having a translucent property to said sealing layer;
• and
• removing said first insulating film to peel off said first substrate.