Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device, comprising:

• forming a conductive layer below a plate layer;
• forming a molded structure on the plate layer;
• forming channel layers extending in the molded structure in a first direction perpendicular to an upper surface of the plate layer;
• forming metal silicide layers on respective upper surfaces of the channel layers using the metal layer;
• and
• applying an electric field to crystallize the channel layers using the metal silicide layers, wherein the applying the electric field comprises:
• providing a wafer comprising the plate layer on an electrostatic chuck in a plasma chamber;
• and
• applying a voltage to the electrostatic chuck and an upper electrode on the wafer to form plasma on the channel layers.

A method of manufacturing a semiconductor device, comprising:

• forming a conductive layer below a plate layer;
• alternately stacking interlayer insulating layers and sacrificial insulating layers on the plate layer in a first direction perpendicular to an upper surface of the plate layer to form a molded structure;
• forming channel holes extending in the first direction through the molded structure;
• forming channel layers in the channel holes;
• forming a metal layer on the channel layers;
• forming a metal silicide layer on an upper surface of each of the channel layers using the metal layer;
• heating the channel layers;
• applying an electric field in the first direction to crystallize the channel layers using the metal silicide layers;
• and
• removing the conductive layer.