Method for the solid phase crystallisation of an amorphous layer

A method for crystallizing at least a portion of an amorphous layer based on a first material, the amorphous layer being included in a stack that further comprises a crystalline layer, the amorphous layer extending in direct contact with the crystalline layer so as to define an interface with the crystalline layer, the amorphous layer having a first face opposite the interface, and the amorphous layer having a melting threshold energy density EM corresponding to an energy density required to melt the first material for a thickness Ep of the amorphous layer defined between the first face and the interface, the method comprising:

• performing a crystallization annealing of the amorphous layer by subjecting the amorphous layer, zone by zone to laser pulses,
• wherein, in each zone, the laser pulses are emitted in a plurality of series of pulses, each series having pulse energy density EDi, the pulse energy density EDi differing from one series to another, and
• wherein, for each of the series, the pulse energy density EDi is maintained below the melting threshold energy density EM, the melting threshold energy density EM evolving as the amorphous layer crystallizes.