H10P 14/3466
Crystal orientation
Official title: {Crystal orientation}
H10P14/3466 (Crystal orientation) appears on 942 US grants and 1,045 published applications in this corpus.
Search patents in H10P- Granted patents
- 942
- Published applications
- 1,045
- Assignees
- 355
- Inventors
- 1,846
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 2 | 0 |
| 1984 | 3 | 0 |
| 1985 | 2 | 0 |
| 1986 | 2 | 0 |
| 1987 | 6 | 0 |
| 1988 | 2 | 0 |
| 1989 | 4 | 0 |
| 1990 | 3 | 0 |
| 1991 | 2 | 0 |
| 1992 | 4 | 0 |
| 1993 | 1 | 0 |
| 1994 | 5 | 0 |
| 1995 | 8 | 0 |
| 1996 | 4 | 0 |
| 1997 | 3 | 0 |
| 1998 | 17 | 0 |
| 1999 | 13 | 0 |
| 2000 | 5 | 0 |
| 2001 | 14 | 1 |
| 2002 | 6 | 23 |
| 2003 | 16 | 27 |
| 2004 | 19 | 25 |
| 2005 | 20 | 26 |
| 2006 | 20 | 28 |
| 2007 | 22 | 39 |
| 2008 | 16 | 43 |
| 2009 | 23 | 50 |
| 2010 | 32 | 45 |
| 2011 | 44 | 45 |
| 2012 | 40 | 46 |
| 2013 | 25 | 34 |
| 2014 | 54 | 52 |
| 2015 | 45 | 56 |
| 2016 | 64 | 68 |
| 2017 | 60 | 68 |
| 2018 | 45 | 39 |
| 2019 | 52 | 53 |
| 2020 | 54 | 53 |
| 2021 | 36 | 54 |
| 2022 | 31 | 37 |
| 2023 | 31 | 37 |
| 2024 | 37 | 44 |
| 2025 | 31 | 39 |
| 2026 | 16 | 13 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor element and production method for same29 Sep 2026US 12,751,048 B2National Institute of Information and Communications Technology
- Crystalline oxide film and semiconductor device29 Sep 2026US 12,751,220 B2Flosfia Inc.
- Method of forming an epitaxial layer1 Sep 2026US 12,727,402 B2ASM IP Holding B. V.
- Epitaxial structures grown on material with a crystallographic orientation of {110}25 Aug 2026US 12,720,827 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Segmented transistor active region for enhanced thermal conductivity11 Aug 2026US 12,707,685 B2Raytheon Technologies Corporation
- Epitaxial structures grown on material with a crystallographic orientation of {110}8 Oct 2026US 2026/0313994 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Fin loss prevention1 Oct 2026US 2026/0304913 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and method of forming thereof6 Aug 2026US 2026/0231699 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Source/Drain Epitaxial Layers For Transistors30 Jul 2026US 2026/0223416 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and manufacturing method therefor16 Jul 2026US 2026/0206501 A1Jusung Engineering Co., Ltd.
Most cited
By later US patents
- Selective growth method, and semiconductor light emitting device and fabrication method thereof734US 6,858,081 B2Sony Corporation · 2005
- FinFET device having a channel defined in a diamond-like shape semiconductor structure537US 8,841,701 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Method of preparing silicon carbide surfaces for crystal growth490US 4,946,547 ACree Research, Inc. · 1990
- Semiconductor light-emitting device and semiconductor light-emitting device486US 7,087,932 B2Sony Corporation · 2006
- Contact structure of semiconductor device388US 8,716,765 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014