Epitaxial structures grown on material with a crystallographic orientation of {110}

A method, comprising:

• forming a fin structure on a substrate, wherein the fin structure includes a semiconductor material having substantially a {110} crystallographic orientation, wherein the fin structure includes nanosheets formed from the semiconductor material having the {110} crystallographic orientation, wherein the nanosheets are separated from one another by gaps;
• etching a portion of the fin structure to expose a sidewall portion and a bottom surface of the semiconductor material, wherein the sidewall portion of the semiconductor material is defined by sidewall portions of the nanosheets;
• forming intermittent dielectric segments over the sidewall portion and the bottom surface;
• and
• while the intermittent dielectric segments cover regions of the sidewall portion and the bottom surface, growing an epitaxial structure on the sidewall portion of the semiconductor material not covered by the intermittent dielectric segments, wherein the epitaxial structure propagates with facets having a {110} crystallographic orientation, wherein growing the epitaxial structure on the sidewall portion comprises growing the epitaxial structure on the sidewall portions of the nanosheets, wherein a first portion of the epitaxial structure grows on a sidewall portion of a first nanosheet and a second portion of the epitaxial structure grows on a sidewall portion of a second nanosheet, and wherein the first portion and the second portion merge along an interface at a [Ī10] plane, and wherein the epitaxial structure is formed with two top surfaces, wherein each top surface intersects a horizontal plane substantially parallel to the substrate at an angle less than 45°.