H10P 14/3456
Polycrystalline
Official title: {Polycrystalline}
H10P14/3456 (Polycrystalline) appears on 1,141 US grants and 1,258 published applications in this corpus.
Search patents in H10P- Granted patents
- 1,141
- Published applications
- 1,258
- Assignees
- 375
- Inventors
- 2,123
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 2 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 3 | 0 |
| 1990 | 1 | 0 |
| 1991 | 2 | 0 |
| 1992 | 2 | 0 |
| 1993 | 3 | 0 |
| 1994 | 9 | 0 |
| 1995 | 2 | 0 |
| 1996 | 4 | 0 |
| 1997 | 1 | 0 |
| 1998 | 14 | 0 |
| 1999 | 12 | 0 |
| 2000 | 10 | 0 |
| 2001 | 21 | 12 |
| 2002 | 19 | 41 |
| 2003 | 27 | 32 |
| 2004 | 42 | 50 |
| 2005 | 29 | 70 |
| 2006 | 27 | 58 |
| 2007 | 50 | 41 |
| 2008 | 33 | 34 |
| 2009 | 32 | 37 |
| 2010 | 39 | 29 |
| 2011 | 35 | 32 |
| 2012 | 21 | 23 |
| 2013 | 27 | 31 |
| 2014 | 32 | 52 |
| 2015 | 53 | 76 |
| 2016 | 68 | 69 |
| 2017 | 69 | 75 |
| 2018 | 58 | 72 |
| 2019 | 66 | 73 |
| 2020 | 84 | 88 |
| 2021 | 74 | 72 |
| 2022 | 36 | 51 |
| 2023 | 48 | 47 |
| 2024 | 39 | 42 |
| 2025 | 27 | 32 |
| 2026 | 15 | 19 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Composition and method for making picocrystalline artificial borane atoms6 Oct 2026US 12,757,646 B2SemiNuclear, Inc.
- SiC semiconductor substrate and fabrication method of the SiC semiconductor substrate28 Jul 2026US 12,696,508 B2Rohm Co., Ltd.
- Memory transistor with multiple charge storage layers21 Jul 2026US 12,690,238 B2Longitude Flash Memory Solutions Ltd.
- Group III nitride substrate with oxygen gradient, method of making, and method of use7 Jul 2026US 12,677,604 B2SLT Technologies, Inc.
- Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium23 Jun 2026US 12,666,906 B2Kokusai Electric Corporation
- Substrate for sic semiconductor devices, sic bonded substrate, sic polycrystalline substrate, and method for producing sic polycrystalline substrate1 Oct 2026US 2026/0305193 A1Sumitomo Metal Mining Co., Ltd.
- Method for forming a crystalline protective polysilicon layer24 Sep 2026US 2026/0293279 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Substrate processing apparatus, substrate processing method, method of manufacturing semiconductor device, and recording medium24 Sep 2026US 2026/0293590 A1Kokusai Electric Corporation
- Devices and methods involving low-temperature-grown diamond in electronic devices27 Aug 2026US 2026/0250881 A1The Board of Trustees of the Leland Stanford Junior University
- Semiconductor wafer and device including impurity adsorption layer27 Aug 2026US 2026/0255896 A1SK keyfoundry Inc.
Most cited
By later US patents
- Dopant precursors and processes596US 6,743,738 B2ASM America, Inc. · 2004
- Method of making low resistance polysilicon gate transistors and low resistance interconnections therefor via gas deposited in-situ doped amorphous layer and heat-treatment555US 4,479,831 ABurroughs Corporation · 1984
- Selective inhibition in atomic layer deposition of silicon-containing films484US 9,875,891 B2Lam Research Corporation · 2018
- Polysilicon films by HDP-CVD478US 8,450,191 B2APPLIED Materials.Inc. · 2013
- Semiconductor thin film forming method, production methods for semiconductor device and electrooptical device, devices used for these methods, and semiconductor device and electrooptical device465US 7,183,229 B2Sony Corporation · 2007