H10P 14/3444
P-type
Official title: {P-type}
H10P14/3444 (P-type) appears on 2,027 US grants and 2,074 published applications in this corpus.
Search patents in H10P- Granted patents
- 2,027
- Published applications
- 2,074
- Assignees
- 666
- Inventors
- 3,810
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 15 | 0 |
| 1977 | 13 | 0 |
| 1978 | 7 | 0 |
| 1979 | 9 | 0 |
| 1980 | 4 | 0 |
| 1981 | 5 | 0 |
| 1982 | 6 | 0 |
| 1983 | 12 | 0 |
| 1984 | 13 | 0 |
| 1985 | 20 | 0 |
| 1986 | 16 | 0 |
| 1987 | 24 | 0 |
| 1988 | 24 | 0 |
| 1989 | 30 | 0 |
| 1990 | 14 | 0 |
| 1991 | 15 | 0 |
| 1992 | 12 | 0 |
| 1993 | 29 | 0 |
| 1994 | 17 | 0 |
| 1995 | 19 | 0 |
| 1996 | 14 | 0 |
| 1997 | 13 | 0 |
| 1998 | 22 | 0 |
| 1999 | 28 | 0 |
| 2000 | 21 | 0 |
| 2001 | 29 | 16 |
| 2002 | 39 | 53 |
| 2003 | 37 | 54 |
| 2004 | 33 | 45 |
| 2005 | 41 | 51 |
| 2006 | 26 | 58 |
| 2007 | 26 | 54 |
| 2008 | 32 | 60 |
| 2009 | 43 | 51 |
| 2010 | 64 | 68 |
| 2011 | 38 | 70 |
| 2012 | 54 | 83 |
| 2013 | 53 | 87 |
| 2014 | 81 | 101 |
| 2015 | 93 | 110 |
| 2016 | 95 | 96 |
| 2017 | 81 | 91 |
| 2018 | 90 | 99 |
| 2019 | 88 | 115 |
| 2020 | 114 | 141 |
| 2021 | 98 | 123 |
| 2022 | 82 | 101 |
| 2023 | 81 | 116 |
| 2024 | 87 | 115 |
| 2025 | 84 | 81 |
| 2026 | 36 | 35 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Composition and method for making picocrystalline artificial borane atoms6 Oct 2026US 12,757,646 B2SemiNuclear, Inc.
- Semiconductor substrate, method for producing semiconductor substrate, semiconductor substrate production device, electronic component, and electronic device29 Sep 2026US 12,751,219 B2KYOCERA Corporation
- Systems for selective deposition using a sacrificial capping layer15 Sep 2026US 12,740,346 B2ASM IP Holding B. V.
- Method of forming an epitaxial layer1 Sep 2026US 12,727,402 B2ASM IP Holding B. V.
- Gate structure for semiconductor device18 Aug 2026US 12,713,683 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Reduction of interface resistance between silicon nanosheets and highly doped source/drain regions in nanosheet devices1 Oct 2026US 2026/0304810 A1ASM IP Holding B. V.
- Microwave plasma cvd device27 Aug 2026US 2026/0253840 A1National Institute of Advanced Industrial Science and Technology
- Semiconductor material and method for preparing the same6 Aug 2026US 2026/0231698 A1National Tsing Hua University
- Uniform And Controllable Silicone Doping Of Aluminum Nitride30 Jul 2026US 2026/0218418 A1The Regents of the University of Michigan
- Doping control in tmd (transition metal dichalcogenide) films23 Jul 2026US 2026/0209934 A1Intermolecular, Inc.
Most cited
By later US patents
- Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby3,970US 7,402,506 B2Eastman Kodak Company · 2008
- Contact structure of semiconductor device1,648US 9,105,490 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Contact structure of semiconductor device1,334US 8,823,065 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Apparatus and method for forming semiconductor contacts1,331US 8,772,109 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Selective growth method, and semiconductor light emitting device and fabrication method thereof734US 6,858,081 B2Sony Corporation · 2005