Doping control in tmd (transition metal dichalcogenide) films
AssigneeIntermolecular, Inc.
InventorsSergey V. Barabash, Amish Chovativa, Michael Miller
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Abstract
The disclosure relates to a method of producing an intrinsic or doped transition metal dichalcogenide film comprising: providing a substrate in a deposition chamber; providing a reducing environment and an excess of chalcogen in the deposition chamber; and forming the intrinsic or doped transition metal dichalcogenide film on a surface of the substrate. The transition metal may be Mo or W, and the chalcogen may be S, Se, or Te. The reducing environment may be a hydrogen rich environment.
Claims18
A method of producing an intrinsic or p-doped transition metal dichalcogenide film comprising:
- providing a substrate in a deposition chamber;
- providing a transition metal, wherein the transition metal is Mo or W;
- providing a reducing environment and an excess of chalcogen in the deposition chamber;
- and
- forming the intrinsic or p-doped transition metal dichalcogenide film on a surface of the substrate.
(canceled)
Dependencies are inferred from the claim text.