H10P 14/3248
Consisting of two layers
Official title: {consisting of two layers}
H10P14/3248 (Consisting of two layers) appears on 1,453 US grants and 1,595 published applications in this corpus.
Search patents in H10P- Granted patents
- 1,453
- Published applications
- 1,595
- Assignees
- 576
- Inventors
- 3,005
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 4 | 0 |
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 2 | 0 |
| 1985 | 4 | 0 |
| 1986 | 5 | 0 |
| 1987 | 5 | 0 |
| 1988 | 2 | 0 |
| 1989 | 6 | 0 |
| 1990 | 5 | 0 |
| 1991 | 7 | 0 |
| 1992 | 8 | 0 |
| 1993 | 10 | 0 |
| 1994 | 3 | 0 |
| 1995 | 12 | 0 |
| 1996 | 10 | 0 |
| 1997 | 7 | 0 |
| 1998 | 18 | 0 |
| 1999 | 21 | 0 |
| 2000 | 28 | 0 |
| 2001 | 27 | 13 |
| 2002 | 22 | 52 |
| 2003 | 46 | 77 |
| 2004 | 51 | 74 |
| 2005 | 54 | 78 |
| 2006 | 60 | 83 |
| 2007 | 53 | 89 |
| 2008 | 48 | 51 |
| 2009 | 54 | 43 |
| 2010 | 62 | 49 |
| 2011 | 48 | 63 |
| 2012 | 50 | 80 |
| 2013 | 53 | 62 |
| 2014 | 66 | 80 |
| 2015 | 63 | 56 |
| 2016 | 66 | 58 |
| 2017 | 53 | 67 |
| 2018 | 51 | 60 |
| 2019 | 71 | 64 |
| 2020 | 57 | 62 |
| 2021 | 50 | 71 |
| 2022 | 43 | 61 |
| 2023 | 43 | 63 |
| 2024 | 48 | 65 |
| 2025 | 34 | 48 |
| 2026 | 20 | 26 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Systems and methods for tuning porous bandgaps to reduce thermal donor effects20 Aug 2026US 2026/0247673 A1IQE plc
- A method of forming a graphene layer structure and a graphene substrate6 Aug 2026US 2026/0226652 A1Paragraf Limited
- Uniform And Controllable Silicone Doping Of Aluminum Nitride30 Jul 2026US 2026/0218418 A1The Regents of the University of Michigan
Most cited
By later US patents
- Selective growth method, and semiconductor light emitting device and fabrication method thereof734US 6,858,081 B2Sony Corporation · 2005
- Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device643US 6,153,010 ANichia Chemical Industries, Ltd. · 2000
- Method of manufacturing a substrate using an SiGe layer600US 6,607,948 B1Kabushiki Kaisha Toshiba · 2003
- Semiconductor thin film forming method, production methods for semiconductor device and electrooptical device, devices used for these methods, and semiconductor device and electrooptical device465US 7,183,229 B2Sony Corporation · 2007
- Construction of thin strain-relaxed SiGe layers and method for fabricating the same421US 7,202,512 B2Industrial Technology Research Institute · 2007