H10N 70/25
Based on bulk electronic defects
Official title: {based on bulk electronic defects, e.g. trapping of electrons}
H10N70/25 (Based on bulk electronic defects) appears on 219 US grants and 271 published applications in this corpus.
Search patents in H10N- Granted patents
- 219
- Published applications
- 271
- Assignees
- 80
- Inventors
- 449
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 2 |
| 2005 | 0 | 3 |
| 2006 | 4 | 1 |
| 2007 | 1 | 8 |
| 2008 | 2 | 2 |
| 2009 | 0 | 12 |
| 2010 | 4 | 8 |
| 2011 | 7 | 9 |
| 2012 | 10 | 12 |
| 2013 | 19 | 23 |
| 2014 | 30 | 36 |
| 2015 | 28 | 24 |
| 2016 | 17 | 9 |
| 2017 | 15 | 13 |
| 2018 | 6 | 13 |
| 2019 | 14 | 15 |
| 2020 | 12 | 5 |
| 2021 | 4 | 9 |
| 2022 | 7 | 12 |
| 2023 | 12 | 16 |
| 2024 | 6 | 12 |
| 2025 | 9 | 13 |
| 2026 | 4 | 14 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method for preparing reservoir element25 Aug 2026US 12,721,050 B2Institute of Microelectronics, Chinese Academy of Sciences
- Semiconductor device4 Aug 2026US 12,701,718 B2SK hynix Inc.
- Non-volatile memory device and method for driving same21 Apr 2026US 12,610,559 B2Daegu Gyeongbuk Institute of Science and Technology
- Energy efficient ferroelectric device and method for making the same6 Jan 2026US 12,520,735 B2Regents of the University of Minnesota
- Selective element doped with chalcogen element30 Dec 2025US 12,513,913 B2Industry-University Cooperation Foundation Hanyang University
- Target for film deposition and method for producing functional layer24 Sep 2026US 2026/0286505 A1Nippon Electric Glass Co., Ltd.
- Dual-dimensional memory junction device and preparation method, performance acquisition method, and application method for dual-dimensional memory junction device27 Aug 2026US 2026/0255886 A1Huazhong University of Science and Technology
- Multi-state memory comprising tunnel junctions with topologically stabilized structures13 Aug 2026US 2026/0239893 A1Centre National De La Recherche Scientifique
- Spin-orbit ferroelectric memory cells and matrix for memory, ai and imc applications23 Jul 2026US 2026/0215170 A1
- Programmable Heterojunction Memory Device With Current Blocking2 Jul 2026US 2026/0190350 A1Chengdu Pbm Technology Ltd.
Most cited
By later US patents
- Amorphous silicon memory300US 5,360,981 ABritish Telecommunications Public Ltd.Co. · 1994
- Irreversible semiconductor switching element and semiconductor memory device utilizing the same147US 4,146,902 ANippon Telegraph & Telephone Public Corporation · 1979
- Resistive switching memory element including doped silicon electrode127US 8,183,553 B2Intermolecular, Inc. · 2012
- Reversibly programmable polycrystalline silicon memory element117US 4,420,766 AHarris Corporation · 1983
- Memory device electrode with a surface structure80US 7,405,418 B2Infineon Technologies AG · 2008