Resistive switching memory element including doped silicon electrode
AssigneeIntermolecular, Inc.
InventorsPrashant Phatak, Tony Chiang, Michael Miller, Wen Wu
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Abstract
A resistive switching memory element including a doped silicon electrode is described, including a first electrode comprising doped silicon having a first work function, a second electrode having a second work function that is different from the first work function by between 0.1 and 1.0 electron volts (eV), a metal oxide layer between the first electrode and the second electrode, the metal oxide layer switches using bulk-mediated switching and has a bandgap of greater than 4 eV, and the memory element switches from a low resistance state to a high resistance state and vice versa.
Claims20
A non-volatile resistive-switching memory element comprising:
- a first electrode comprising doped silicon having a first work function;
- a second electrode having a second work function that is different from the first work function by between 0.1 and 1.0 electron volts (eV);
- a metal oxide switching layer between the first electrode and the second electrode, the metal oxide layer:
- switches using bulk-mediated switching;
- has a bandgap of greater than 4 eV;
- and
- wherein the memory element switches from a low resistance state to a high resistance state and vice versa.
A nonvolatile resistive-switching memory element comprising:
- a doped polysilicon electrode;
- a metal oxide switching layer over the doped polysilicon electrode that switches using bulk-mediated switching and has a bandgap of greater than 4 electron volts (eV);
- a coupling layer over the resistive-switching metal oxide layer having a most prevalent metal;
- and
- a metal electrode over the coupling layer, the metal electrode having a work function that is between 0.4 and 0.6 eV different from a work function of the doped polysilicon electrode.
A nonvolatile resistive-switching memory element comprising:
- an n-type doped polysilicon electrode and a titanium nitride electrode;
- a metal oxide switching layer between the polysilicon electrode and the titanium nitride electrode;
- and
- wherein the polysilicon electrode is configured to receive a positive reset voltage relative to a common electrical reference.
Dependencies are inferred from the claim text.