Reversibly programmable polycrystalline silicon memory element
AssigneeHarris Corporation
InventorAlan J. Kasten
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Abstract
A polycrystalline silicon memory element having an impurity concentration in the range of 10.sup.17 to 10.sup.20 atoms per cubic centimeter is reversibly switchable from a high to a low resistance state through a negative resistance region using a voltage above the threshold having a ramped trailing edge.
Claims3
A reversibly programmable non-volatile memory element comprising a thin layer of polycrystalline silicon having an impurity concentration in the range of 10.sup.17 to 10.sup.20 atoms per cubic centimeter and a pair of electrode means connected to said thin layer for applying a voltage having a ramped trailing edge to switch said element from a high to a low resistance state and a voltage having a straight trailing edge to switch said element from a low to a high resistance state.
Dependencies are inferred from the claim text.