H10N 70/20
Multistable switching devices
Official title: Multistable switching devices, e.g. memristors
H10N70/20 (Multistable switching devices) appears on 9,492 US grants and 11,143 published applications in this corpus.
Search patents in H10N- Granted patents
- 9,492
- Published applications
- 11,143
- Assignees
- 822
- Inventors
- 7,439
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 7 | 0 |
| 1977 | 3 | 0 |
| 1978 | 2 | 0 |
| 1979 | 5 | 0 |
| 1980 | 3 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 2 | 0 |
| 1984 | 2 | 0 |
| 1985 | 2 | 0 |
| 1986 | 2 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 8 | 0 |
| 1990 | 3 | 0 |
| 1991 | 1 | 0 |
| 1992 | 2 | 0 |
| 1993 | 1 | 0 |
| 1994 | 13 | 0 |
| 1995 | 5 | 0 |
| 1996 | 4 | 0 |
| 1997 | 5 | 0 |
| 1998 | 10 | 0 |
| 1999 | 8 | 0 |
| 2000 | 16 | 0 |
| 2001 | 12 | 6 |
| 2002 | 21 | 45 |
| 2003 | 53 | 119 |
| 2004 | 88 | 176 |
| 2005 | 107 | 185 |
| 2006 | 135 | 300 |
| 2007 | 130 | 364 |
| 2008 | 183 | 472 |
| 2009 | 226 | 495 |
| 2010 | 436 | 573 |
| 2011 | 499 | 534 |
| 2012 | 479 | 590 |
| 2013 | 610 | 657 |
| 2014 | 701 | 709 |
| 2015 | 709 | 585 |
| 2016 | 628 | 524 |
| 2017 | 531 | 482 |
| 2018 | 439 | 442 |
| 2019 | 505 | 550 |
| 2020 | 560 | 698 |
| 2021 | 533 | 594 |
| 2022 | 447 | 545 |
| 2023 | 412 | 468 |
| 2024 | 357 | 402 |
| 2025 | 384 | 350 |
| 2026 | 200 | 278 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Process for cointegration of two phase change memory (PCM) arrays having different phase change materials, and in-memory computation system utilizing the two PCM arrays6 Oct 2026US 12,757,642 B2STMicroelectronics International N. V.
- Electrostatic discharge path for preventing plasma-induced damage during patterning of phase change material and method for forming the same6 Oct 2026US 12,757,643 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device with phase-change material and method for manufacturing thereof6 Oct 2026US 12,757,644 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Neural Network system, high density embedded-artificial synaptic element and operating method thereof29 Sep 2026US 12,748,957 B2National Tsing Hua University
- Semiconductor device and a method for manufacturing the same29 Sep 2026US 12,751,019 B2Macronix International Co., Ltd.
- Novel pcm device8 Oct 2026US 2026/0314270 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method for forming the same8 Oct 2026US 2026/0314271 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method of manufacturing semiconductor device1 Oct 2026US 2026/0304785 A1SK hynix Inc.
- Semiconductor device and method for fabricating the same1 Oct 2026US 2026/0304787 A1United Microelectronics Corp.
- Semiconductor device1 Oct 2026US 2026/0304788 A1SK hynix Inc.
Most cited
By later US patents
- Electrically erasable phase change memory628US 5,166,758 AEnergy Conversion Devices, Inc. · 1992
- Memory element with memory material comprising phase-change material and dielectric material570US 6,087,674 AEnergy Conversion Devices, Inc. · 2000
- Thin-film structure for chalcogenide electrical switching devices and process therefor556US 5,177,567 AEnergy Conversion Devices, Inc. · 1993
- Multibit single cell memory element having tapered contact545US 5,687,112 AEnergy Conversion Devices, Inc. · 1997
- Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom495US 5,296,716 AEnergy Conversion Devices, Inc. · 1994