H10N 70/257
Having switching assisted by radiation or particle beam
Official title: {having switching assisted by radiation or particle beam, e.g. optically controlled devices}
H10N70/257 (Having switching assisted by radiation or particle beam) appears on 70 US grants and 71 published applications in this corpus.
Search patents in H10N- Granted patents
- 70
- Published applications
- 71
- Assignees
- 59
- Inventors
- 206
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 2 | 0 |
| 2000 | 2 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 1 |
| 2003 | 1 | 0 |
| 2004 | 2 | 4 |
| 2005 | 3 | 3 |
| 2006 | 1 | 1 |
| 2007 | 1 | 3 |
| 2008 | 3 | 2 |
| 2009 | 1 | 1 |
| 2010 | 3 | 3 |
| 2011 | 0 | 3 |
| 2012 | 4 | 3 |
| 2013 | 3 | 3 |
| 2014 | 0 | 1 |
| 2015 | 5 | 3 |
| 2016 | 2 | 1 |
| 2017 | 1 | 4 |
| 2018 | 1 | 1 |
| 2019 | 2 | 3 |
| 2020 | 7 | 5 |
| 2021 | 4 | 7 |
| 2022 | 3 | 5 |
| 2023 | 4 | 4 |
| 2024 | 4 | 3 |
| 2025 | 2 | 2 |
| 2026 | 4 | 5 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Switch based on a phase change material25 Aug 2026US 12,721,052 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Synaptic device, reservoir computing device including the synaptic device, and reservoir computing method using the computing device14 Jul 2026US 12,685,035 B2Korea Advanced Institute of Science and Technology
- Device and method for high speed metamagnetic resistive switching7 Jul 2026US 12,677,602 B1The Government of the United States as represented by the Director, National Security Agency
- Optical property storage device and system using same28 Apr 2026US 12,614,588 B2Kookmin University Industry Academy Cooperation Foundation
- Antenna assisted ReRAM formation26 Aug 2025US 12,402,544 B2International Business Machines Corporation
- Three-dimensional integrated sensing-memory-computing chip, method for manufacturing the same, and computing method therefor10 Sep 2026US 2026/0271629 A1Tsinghua University
- Dual-dimensional memory junction device and preparation method, performance acquisition method, and application method for dual-dimensional memory junction device27 Aug 2026US 2026/0255886 A1Huazhong University of Science and Technology
- Multi-state memory comprising tunnel junctions with topologically stabilized structures13 Aug 2026US 2026/0239893 A1Centre National De La Recherche Scientifique
- Phase change material switch29 Jan 2026US 2026/0033251 A1Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- High-performance photoactive synaptic device using two-dimensional ferroelectric semiconductor with asymmetric energy band structure1 Jan 2026US 2026/0007082 A1The Industry & Academic Cooperation in Chungnam National University (IAC)
Most cited
By later US patents
- Programmable metallization cell structure and method of making same441US 5,761,115 AArizona Board of Regents · 1998
- Programmable metallization cell structure and method of making same327US 6,084,796 AArizona Board of Regents · 2000
- Programmable metallization cell structure and method of making same305US 5,914,893 AArizona Board of Regents · 1999
- Programmable metallization cell structure and method of making same289US 5,896,312 AAxon Technologies Corporation · 1999
- Transmission/reception semiconductor device with memory element and antenna on same side of conductive adhesive218US 7,816,721 B2Semiconductor Energy Laboratory Co.Ltd. · 2010