H10N 70/24
Based on migration or redistribution of ionic species
Official title: {based on migration or redistribution of ionic species, e.g. anions, vacancies}
H10N70/24 (Based on migration or redistribution of ionic species) appears on 3,559 US grants and 4,077 published applications in this corpus.
Search patents in H10N- Granted patents
- 3,559
- Published applications
- 4,077
- Assignees
- 410
- Inventors
- 3,326
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 2 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 2 | 0 |
| 1999 | 2 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 1 |
| 2002 | 3 | 11 |
| 2003 | 5 | 41 |
| 2004 | 26 | 55 |
| 2005 | 33 | 39 |
| 2006 | 45 | 75 |
| 2007 | 34 | 58 |
| 2008 | 49 | 78 |
| 2009 | 36 | 96 |
| 2010 | 94 | 143 |
| 2011 | 101 | 209 |
| 2012 | 151 | 263 |
| 2013 | 257 | 294 |
| 2014 | 317 | 361 |
| 2015 | 362 | 299 |
| 2016 | 309 | 251 |
| 2017 | 259 | 224 |
| 2018 | 200 | 185 |
| 2019 | 226 | 236 |
| 2020 | 200 | 241 |
| 2021 | 212 | 226 |
| 2022 | 168 | 196 |
| 2023 | 137 | 155 |
| 2024 | 124 | 111 |
| 2025 | 130 | 111 |
| 2026 | 67 | 118 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Neural Network system, high density embedded-artificial synaptic element and operating method thereof29 Sep 2026US 12,748,957 B2National Tsing Hua University
- Semiconductor device and a method for manufacturing the same29 Sep 2026US 12,751,019 B2Macronix International Co., Ltd.
- Diode device with programmable conducting current and array preparation method thereof29 Sep 2026US 12,751,218 B2Zhejiang University
- Resistive random access memory device and fabrication method thereof15 Sep 2026US 12,740,338 B2United Microelectronics Corp.
- Memory device, memory integrated circuit and manufacturing method thereof15 Sep 2026US 12,740,339 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method for fabricating the same1 Oct 2026US 2026/0304787 A1United Microelectronics Corp.
- Bottom electrode structure in memory device1 Oct 2026US 2026/0305185 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Cross-point memory array with access lines24 Sep 2026US 2026/0293158 A1Micron Technology, Inc.
- Resistive random access memory device24 Sep 2026US 2026/0293537 A1United Microelectronics Corp.
- Manufacturing method of resistive memory device10 Sep 2026US 2026/0271306 A1United Microelectronics Corp.
Most cited
By later US patents
- Programmable metallization cell structure and method of making same441US 5,761,115 AArizona Board of Regents · 1998
- Programmable microelectronic devices and method of forming and programming same396US 6,487,106 B1Arizona Board of Regents · 2002
- Methods of forming embedded resistors for resistive random access memory cells347US 9,142,764 B1Intermolecular, Inc. · 2015
- Programmable metallization cell structure and method of making same327US 6,084,796 AArizona Board of Regents · 2000
- Programmable sub-surface aggregating metallization structure and method of making same313US 6,418,049 B1Arizona Board of Regents · 2002