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US 2026/0293537 A1Published application
Resistive random access memory device
AssigneeUnited Microelectronics Corp.
InventorHui-Lin Wang
Life of this patent
Estimating the term…
Abstract
A resistive random access memory (RRAM) includes an interlayer dielectric (ILD) layer on a substrate, a contact plug in the ILD layer, a bottom electrode on the contact plug, a resistor switching layer on the bottom electrode, and a top electrode (TE) on the resistor switching layer. Preferably, the TE includes more than one TE and the more than one TE includes titanium nitride (TiN).
Claims15
A resistive random access memory (RRAM), comprising:
- an interlayer dielectric (ILD) layer on a substrate;
- a contact plug in the ILD layer;
- a bottom electrode on the contact plug;
- a resistor switching layer on the bottom electrode;
- and
- a top electrode (TE) on the resistor switching layer, wherein the TE comprises more than one TE and the more than one TE comprises titanium nitride (TiN).
3 more elements
A resistive random access memory (RRAM), comprising:
- an interlayer dielectric (ILD) layer on a substrate;
- a contact plug in the ILD layer;
- a bottom electrode on the contact plug;
- a resistor switching layer on the bottom electrode;
- and
- a top electrode (TE) on the resistor switching layer, wherein the top electrode comprises titanium nitride (TiN) having a gradient concentration of nitrogen.
3 more elements
Dependencies are inferred from the claim text.