H10N 70/253
Having three or more electrodes
Official title: {having three or more electrodes, e.g. transistor-like devices}
H10N70/253 (Having three or more electrodes) appears on 542 US grants and 652 published applications in this corpus.
Search patents in H10N- Granted patents
- 542
- Published applications
- 652
- Assignees
- 198
- Inventors
- 1,009
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 1 | 0 |
| 1999 | 2 | 0 |
| 2000 | 1 | 0 |
| 2001 | 1 | 1 |
| 2002 | 0 | 0 |
| 2003 | 1 | 0 |
| 2004 | 0 | 5 |
| 2005 | 3 | 2 |
| 2006 | 2 | 14 |
| 2007 | 4 | 15 |
| 2008 | 8 | 22 |
| 2009 | 10 | 30 |
| 2010 | 29 | 18 |
| 2011 | 22 | 30 |
| 2012 | 18 | 18 |
| 2013 | 27 | 24 |
| 2014 | 25 | 21 |
| 2015 | 22 | 32 |
| 2016 | 41 | 38 |
| 2017 | 34 | 41 |
| 2018 | 24 | 27 |
| 2019 | 34 | 35 |
| 2020 | 39 | 56 |
| 2021 | 46 | 47 |
| 2022 | 28 | 40 |
| 2023 | 34 | 36 |
| 2024 | 30 | 40 |
| 2025 | 36 | 30 |
| 2026 | 17 | 30 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Neural Network system, high density embedded-artificial synaptic element and operating method thereof29 Sep 2026US 12,748,957 B2National Tsing Hua University
- RRAM cell and fabrication method therefor1 Sep 2026US 12,727,398 B2Shanghai Ic R&D Center Co., Ltd
- Radio frequency switch18 Aug 2026US 12,713,840 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- PCM device4 Aug 2026US 12,701,929 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Electronic transistors4 Aug 2026US 12,701,930 B2Fundació Institut De Recerca En Energia De Catalunya
- Phase-change material memory devices and methods of forming the same6 Aug 2026US 2026/0231691 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Memory device comprising electro-chemical layer, method for manufacturing memory device and method for driving memory device30 Jul 2026US 2026/0223374 A1Samsung Electronics Co., Ltd.
- Temporal kernel device utilized for threshold computing, temporal kernel computing system, and operating methods thereof23 Jul 2026US 2026/0211991 A1Seoul National University R&Db Foundation
- Spin-orbit ferroelectric memory cells and matrix for memory, ai and imc applications23 Jul 2026US 2026/0215170 A1
- Semiconductor device and manufacturing method thereof16 Jul 2026US 2026/0206225 A1SK hynix Inc.
Most cited
By later US patents
- Programmable metallization cell structure and method of making same441US 5,761,115 AArizona Board of Regents · 1998
- Programmable metallization cell structure and method of making same327US 6,084,796 AArizona Board of Regents · 2000
- Programmable metallization cell structure and method of making same305US 5,914,893 AArizona Board of Regents · 1999
- Programmable metallization cell structure and method of making same289US 5,896,312 AAxon Technologies Corporation · 1999
- Method for switching the properties of perovskite materials used in thin film resistors247US 6,204,139 B1University of Houston · 2001