PCM device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChang-Chih Huang, Han-Yu Chen, Yu-Sheng Chen, Kuo-Chyuan Tzeng
Life of this patent
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Abstract
In various embodiments, an improved structure for a PCM device is provided. The improved structure is configured to help prevent heat dissipation. In one example, the PCM device is an PCM RF Switch, which has a substrate, a heater, a dielectric/insulator layer, oxidation layers, electrodes, a PCM region, and/or any other components. The oxidation layers are configured to help prevent heat dissipation from the heater.
Claims20
A phase change material (PCM) radio frequency (RF) switch comprising:
- a substrate;
- a heater element formed above the substrate;
- a dielectric layer formed on the heater element;
- oxidation layers formed on the substrate and around the heater element and the dielectric layer, wherein upper surfaces of the oxidation layers are co-planar with an upper surface of the dielectric layer;
- a PCM region formed on the dielectric layer, wherein the PCM region is wider than the heater element;
- spacers formed on the oxidation layers and along sidewalls of the PCM region;
- and
- electrodes formed around the PCM region and over the spacers.
A phase change material (PCM) device, comprising:
- a substrate;
- a heater element formed above the substrate;
- a dielectric layer formed on the heater element;
- oxidation layers formed on the substrate and around the heater element and the dielectric layer, wherein upper surfaces of the oxidation layers are coplanar with an upper surface of the dielectric layer;
- a PCM region formed on the dielectric layer, wherein the PCM region is wider than the heater element;
- spacers formed on the oxidation layers and along sidewalls of the PCM region;
- and
- electrodes formed around the PCM region and over the spacers, wherein the electrodes and the PCM region defines a radio frequency path for the PCM device.
A phase change material (PCM) device, comprising:
- a substrate;
- a heater element disposed on the substrate, a lower surface of the heater element being coplanar with an upper surface of the substrate;
- a dielectric layer disposed on the heater element;
- at least one oxidation layer disposed on the substrate and around the heater element and the dielectric layer, wherein upper surfaces of the at least one oxidation layer are coplanar with an upper surface of the dielectric layer;
- a PCM region formed on the dielectric layer, wherein the PCM region is wider than the heater element;
- and
- spacers formed on the at least one oxidation layer and along sidewalls of the PCM region.
Dependencies are inferred from the claim text.