Spin-orbit ferroelectric memory cells and matrix for memory, ai and imc applications

A memory cell comprising:

• a spin-orbit ferroelectric memory comprising at least a first terminal, a second terminal, and a third terminal, the spin-orbit ferroelectric memory having a spontaneous electrical polarisation being able to adopt at least two distinct states, the first, second, and third terminals being connected to the spin-orbit ferroelectric memory in a way that a first charge current flows in the second terminal when a voltage is applied between the first and third terminals, the amplitude and sign of the charge current being function of the voltage applied between the first and third terminals and function of the spontaneous electrical polarisation, the memory cell being characterized in that it comprises an isolation component connected to the second terminal and configured to:
• prevent charge currents from flowing in the second terminal towards the spin-orbit ferroelectric memory when no voltage is applied between the first and third terminals;
• and
• allow charge currents to flow in the second terminal and from the spin-orbit ferroelectric memory when a voltage is applied between the first and third terminals.