H10N 70/231
Based on solid-state phase change
Official title: {based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect}
H10N70/231 (Based on solid-state phase change) appears on 4,964 US grants and 5,828 published applications in this corpus.
Search patents in H10N- Granted patents
- 4,964
- Published applications
- 5,828
- Assignees
- 454
- Inventors
- 4,092
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 0 | 0 |
| 1978 | 1 | 0 |
| 1979 | 2 | 0 |
| 1980 | 3 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 2 | 0 |
| 1986 | 2 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 4 | 0 |
| 1995 | 2 | 0 |
| 1996 | 3 | 0 |
| 1997 | 2 | 0 |
| 1998 | 7 | 0 |
| 1999 | 5 | 0 |
| 2000 | 12 | 0 |
| 2001 | 11 | 5 |
| 2002 | 18 | 34 |
| 2003 | 41 | 67 |
| 2004 | 54 | 97 |
| 2005 | 56 | 110 |
| 2006 | 68 | 183 |
| 2007 | 74 | 254 |
| 2008 | 115 | 335 |
| 2009 | 164 | 328 |
| 2010 | 298 | 348 |
| 2011 | 340 | 257 |
| 2012 | 260 | 285 |
| 2013 | 260 | 277 |
| 2014 | 321 | 308 |
| 2015 | 308 | 257 |
| 2016 | 289 | 262 |
| 2017 | 257 | 210 |
| 2018 | 201 | 211 |
| 2019 | 241 | 275 |
| 2020 | 330 | 392 |
| 2021 | 275 | 310 |
| 2022 | 226 | 276 |
| 2023 | 221 | 243 |
| 2024 | 193 | 224 |
| 2025 | 187 | 173 |
| 2026 | 102 | 107 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Process for cointegration of two phase change memory (PCM) arrays having different phase change materials, and in-memory computation system utilizing the two PCM arrays6 Oct 2026US 12,757,642 B2STMicroelectronics International N. V.
- Electrostatic discharge path for preventing plasma-induced damage during patterning of phase change material and method for forming the same6 Oct 2026US 12,757,643 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device with phase-change material and method for manufacturing thereof6 Oct 2026US 12,757,644 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device, memory cell and method of forming the same22 Sep 2026US 12,745,574 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Phase change memory cell sidewall heater15 Sep 2026US 12,740,334 B2International Business Machines Corporation
- Novel pcm device8 Oct 2026US 2026/0314270 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method for forming the same8 Oct 2026US 2026/0314271 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method of manufacturing semiconductor device1 Oct 2026US 2026/0304785 A1SK hynix Inc.
- Phase change material radio-frequency switch for low power consumption and methods for forming the same1 Oct 2026US 2026/0305186 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Phase change material switch with improved thermal dissipation and methods for forming the same1 Oct 2026US 2026/0305188 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Electrically erasable phase change memory628US 5,166,758 AEnergy Conversion Devices, Inc. · 1992
- Memory element with memory material comprising phase-change material and dielectric material570US 6,087,674 AEnergy Conversion Devices, Inc. · 2000
- Thin-film structure for chalcogenide electrical switching devices and process therefor556US 5,177,567 AEnergy Conversion Devices, Inc. · 1993
- Multibit single cell memory element having tapered contact545US 5,687,112 AEnergy Conversion Devices, Inc. · 1997
- Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom495US 5,296,716 AEnergy Conversion Devices, Inc. · 1994