H10N 70/235
Between different crystalline phases
Official title: {between different crystalline phases, e.g. cubic and hexagonal}
H10N70/235 (Between different crystalline phases) appears on 319 US grants and 345 published applications in this corpus.
Search patents in H10N- Granted patents
- 319
- Published applications
- 345
- Assignees
- 100
- Inventors
- 471
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 2 |
| 2007 | 0 | 2 |
| 2008 | 0 | 11 |
| 2009 | 4 | 5 |
| 2010 | 7 | 16 |
| 2011 | 6 | 10 |
| 2012 | 9 | 7 |
| 2013 | 9 | 14 |
| 2014 | 17 | 28 |
| 2015 | 29 | 29 |
| 2016 | 46 | 49 |
| 2017 | 35 | 32 |
| 2018 | 36 | 32 |
| 2019 | 28 | 35 |
| 2020 | 38 | 28 |
| 2021 | 18 | 12 |
| 2022 | 10 | 8 |
| 2023 | 13 | 8 |
| 2024 | 8 | 8 |
| 2025 | 3 | 8 |
| 2026 | 2 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Phase change material switch with reduced insertion loss and methods for forming the same15 Sep 2026US 12,740,335 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Cross-point memory array with access lines16 Jun 2026US 12,660,207 B2Micron Technology, Inc.
- Conductive oxide diffusion barrier for laser crystallization23 Sep 2025US 12,426,518 B2International Business Machines Corporation
- Semiconductor apparatus1 Apr 2025US 12,268,105 B2Samsung Electronics Co., Ltd.
- Display material11 Mar 2025US 12,250,892 B2E Ink Corporation
- Cross-point memory array with access lines24 Sep 2026US 2026/0293158 A1Micron Technology, Inc.
- Memory circuit based on a phase-change material18 Dec 2025US 2025/0386516 A1STMicroelectronics International N. V.
- Semiconductor device and method for manufacturing the same11 Dec 2025US 2025/0380621 A1Research & Business Foundation Sungkyunkwan University
- Method of manufacturing gamma-gese layer and method of manufacturing memory device by using the same2 Oct 2025US 2025/0311649 A1Samsung Electronics Co., Ltd.
- Wafer sensor and wafer alignment system including the same17 Jul 2025US 2025/0232998 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Bromine containing silicon precursors for encapsulation layers440US 9,865,815 B2Lam Research Corporation · 2018
- Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines288US 7,983,065 B2SanDisk 3D LLC · 2011
- Homogeneous compositions of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements266US 5,596,522 AEnergy Conversion Devices, Inc. · 1997
- Transmission/reception semiconductor device with memory element and antenna on same side of conductive adhesive218US 7,816,721 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating193US 8,243,499 B2Zeno Semiconductor, Inc. · 2012