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US 12,426,518 B2Granted
Conductive oxide diffusion barrier for laser crystallization
AssigneeInternational Business Machines Corporation
InventorsNing Li, Fabio Carta, Devendra K. Sadana, Tze-Chiang Chen
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Abstract
A cross-point memory semiconductor structure and a method of creating the same are provided. There is a first electrode layer on top of the substrate. A conductive oxide diffusion barrier layer is on top of the first electrode. A polycrystalline silicon diode is on top of the conductive oxide diffusion barrier. A phase change material (PCM) layer is on top of the polycrystalline silicon diode. A second electrode is on top of the PCM layer.
Claims16
A memory cell, comprising:
- a substrate;
- a first electrode layer on top of the substrate;
- a conductive oxide diffusion barrier layer on top of the first electrode, wherein the conductive oxide diffusion barrier comprises gallium (Ga) doped zinc oxide (ZnO) and is configured to prevent a diffusion of the first electrode layer into a polycrystalline silicon diode on top of the conductive oxide diffusion barrier, wherein the polycrystalline silicon diode is laser annealed;
- and
- a phase change material (PCM) layer on top of the polycrystalline silicon diode;
- and
- a second electrode on top of the PCM layer.
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A method of fabricating a memory cell, comprising:
- providing a substrate;
- providing a first electrode layer on top of the substrate;
- providing a conductive oxide diffusion barrier layer on top of the first electrode comprising gallium (Ga) doped zinc oxide (ZnO);
- configuring a polycrystalline silicon diode on top of the conductive oxide diffusion barrier to prevent a diffusion of the first electrode into a phase change material (PCM) layer on top of the polycrystalline silicon diode;
- laser annealing the polycrystalline silicon diode;
- and
- providing a second electrode on top of the PCM layer.
4 more elements
Dependencies are inferred from the claim text.