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US 12,250,892 B2Granted
Display material
AssigneeE Ink Corporation
InventorsPeiman Hosseini, Clement Talagrand, Graham Triggs, Christopher Wright, Noboru Yamada
Life of this patent
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Abstract
Provided herein is a phase change material for use in a display device. Also provided is a display device comprising a phase change material; the use of a phase change material as an optical absorber in a display device; a method of fabricating a pixel; and a method of fabricating a display device. The phase change material is as described in more detail herein.
Claims7
A phase change material for use in a display device, wherein said phase change material is selected from:
- Sb31.91G40.07Te28.03;
- Sb35.8Ge34.91Te29.28;
- Sb11.72G56.57Te31.71;
- Sb22.26Ge47.06Te30.68;
- Sb46.96Ge24.95Te28.09;
- Sb22.8Ge47.82Te29.38;
- Sb44.34Ge27.5Te28.16;
- Sb45.54Ge24.96Te29.46;
- Sb41.45Ge27.93Te30.62;
- Sb50.51Ge20.3Te29.19;
- Sb51.96 Ge22.01Te26.03;
- Sb33.78Ge44.23Te21.98;
- Sb54.49Ge23.97Te21.54;
- Sb49.8Ge27.68Te22.52;
- Sb48.8Ge29.98Te21.52;
- Sb66.3Ge16.2Te17.5;
- Sb49.67Ge20.43Te29.9;
- Sb45.57Ge24.96Te29.46;
- Sb38.68Ge28.41Te32.92;
- Sb38.37Ge30.62Te31.02;
- Sb36.15Ge30.89Te32.96;
- Sb34.27Ge34.99Te30.74;
- Sb33.79Ge41.06Te25.15;
- Sb24.63Ge42.71Te32.66;
- Se51Te21Sn28;
- Ge8Sn5Te87;
- and
- Te80Sn15Ge5, and
- wherein said phase change material has a recrystallization temperature of at most about 250° C. and a recrystallization time of at least about 1 μs.
26 more elements
Dependencies are inferred from the claim text.