Programmable Heterojunction Memory Device With Current Blocking

Abstract

Disclosed is a programmable heterojunction memory device with current blocking, relating to the field of memory devices. The memory device includes: a first electrode, a current-blocking heterojunction insulating medium layer, and a second electrode that are sequentially connected; the current-blocking heterojunction insulating medium layer includes a current-blocking layer and a programmable medium layer; the current-blocking layer and the programmable medium layer use different insulating media; the first electrode and the second electrode are made of designated matching materials; a bandgap width of the current-blocking layer is smaller than a bandgap width of the programmable medium layer. The memory device can achieve low-cost, high-density storage.

Dependencies are inferred from the claim text.