H10N 70/046
By diffusion
Official title: {by diffusion, e.g. photo-dissolution}
H10N70/046 (By diffusion) appears on 237 US grants and 276 published applications in this corpus.
Search patents in H10N- Granted patents
- 237
- Published applications
- 276
- Assignees
- 74
- Inventors
- 330
- Latest grant
- 14 Oct 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 2 | 6 |
| 2003 | 2 | 22 |
| 2004 | 11 | 26 |
| 2005 | 19 | 16 |
| 2006 | 18 | 16 |
| 2007 | 6 | 4 |
| 2008 | 10 | 14 |
| 2009 | 8 | 14 |
| 2010 | 15 | 15 |
| 2011 | 13 | 16 |
| 2012 | 14 | 13 |
| 2013 | 17 | 12 |
| 2014 | 17 | 14 |
| 2015 | 11 | 10 |
| 2016 | 11 | 8 |
| 2017 | 7 | 8 |
| 2018 | 5 | 11 |
| 2019 | 11 | 13 |
| 2020 | 10 | 10 |
| 2021 | 13 | 11 |
| 2022 | 6 | 5 |
| 2023 | 3 | 6 |
| 2024 | 3 | 3 |
| 2025 | 4 | 1 |
| 2026 | 0 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Resistive random-access memory using stacked technology14 Oct 2025US 12,446,236 B2W&Wram Devices, Inc.
- Memristor having metal/ion channels formed in insulating layer and resistive switching memory device including the same19 Aug 2025US 12,396,378 B2Research & Business Foundation Sungkyunkwan University
- Metal-oxide infiltrated organic-inorganic hybrid resistive random-access memory device8 Jul 2025US 12,356,877 B2Brookhaven Science Associates, LLC
- Switching element and memory device7 Jan 2025US 12,193,340 B2Kioxia Corporation
- Structure and method to fabricate resistive memory with vertical pre-determined filament19 Mar 2024US 11,937,521 B2International Business Machines Corporation
- Resistive random access memory and method of forming the same12 Feb 2026US 2026/0047352 A1United Microelectronics Corp.
- Resistive random-access memory using stacked technology8 Jan 2026US 2026/0013146 A1W&Wram Devices, Inc.
- Semiconductor device and manufacturing method of semiconductor device19 Jun 2025US 2025/0204291 A1SK hynix Inc.
- Physical unclonable functions with copper-silicon oxide programmable metallization cells17 Oct 2024US 2024/0347480 A1
- Semiconductor storage device and manufacturing method therefor29 Aug 2024US 2024/0292631 A1Kioxia Corporation
Most cited
By later US patents
- Programmable microelectronic devices and method of forming and programming same396US 6,487,106 B1Arizona Board of Regents · 2002
- Resistive random accress memory containing a conformal titanium aluminum carbide film and method of making330US 10,361,366 B2Tokyo Electron Limited · 2019
- PCRAM cell manufacturing257US 6,348,365 B1Micron Technology, Inc. · 2002
- Programmable conductor memory cell structure232US 6,864,500 B2Micron Technology, Inc. · 2005
- Integrated circuit device and fabrication using metal-doped chalcogenide materials199US 6,800,504 B2Micron Technology, Inc. · 2004