H10N 70/041
Modification of switching materials after formation
Official title: {Modification of switching materials after formation, e.g. doping (shaping H10N70/061)}
H10N70/041 (Modification of switching materials after formation) appears on 1,047 US grants and 1,229 published applications in this corpus.
Search patents in H10N- Granted patents
- 1,047
- Published applications
- 1,229
- Assignees
- 223
- Inventors
- 1,446
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 3 | 0 |
| 1995 | 0 | 0 |
| 1996 | 1 | 0 |
| 1997 | 1 | 0 |
| 1998 | 2 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 2 | 9 |
| 2003 | 5 | 29 |
| 2004 | 18 | 47 |
| 2005 | 26 | 23 |
| 2006 | 34 | 40 |
| 2007 | 15 | 35 |
| 2008 | 24 | 50 |
| 2009 | 23 | 55 |
| 2010 | 57 | 72 |
| 2011 | 63 | 70 |
| 2012 | 66 | 69 |
| 2013 | 79 | 80 |
| 2014 | 88 | 92 |
| 2015 | 87 | 66 |
| 2016 | 65 | 47 |
| 2017 | 49 | 50 |
| 2018 | 37 | 46 |
| 2019 | 53 | 59 |
| 2020 | 48 | 57 |
| 2021 | 51 | 56 |
| 2022 | 33 | 39 |
| 2023 | 39 | 43 |
| 2024 | 29 | 30 |
| 2025 | 31 | 37 |
| 2026 | 14 | 28 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device including ferroelectric memory cell with doped ferroelectric layer6 Oct 2026US 12,755,782 B2SK Hyinx Inc.
- Electrostatic discharge path for preventing plasma-induced damage during patterning of phase change material and method for forming the same6 Oct 2026US 12,757,643 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device with self-selecting memory layer29 Sep 2026US 12,751,217 B2SK hynix Inc.
- Semiconductor device and method for fabricating the same1 Sep 2026US 12,727,395 B2SK hynix Inc.
- Method for preparing reservoir element25 Aug 2026US 12,721,050 B2Institute of Microelectronics, Chinese Academy of Sciences
- Protective sealant for chalcogenide material and methods for forming the same20 Aug 2026US 2026/0247874 A1Micron Technology, Inc.
- Phase change element configured to increase discrete data states23 Jul 2026US 2026/0212924 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Self-selecting memory device including chalcogenide material and method of manufacturing the same23 Jul 2026US 2026/0215169 A1Postech Research and Business Development Foundation
- Semiconductor device and method for fabricating the same2 Jul 2026US 2026/0190872 A1SK hynix Inc.
- Memory device and method for manufacturing a memory cell arrangement using a preconditioning operation25 Jun 2026US 2026/0181909 A1Ferroelectric Memory GmbH
Most cited
By later US patents
- Electrically erasable memory elements characterized by reduced current and improved thermal stability456US 5,534,712 AEnergy Conversion Devices, Inc. · 1996
- Programmable microelectronic devices and method of forming and programming same396US 6,487,106 B1Arizona Board of Regents · 2002
- Composite memory material comprising a mixture of phase-change memory material and dielectric material389US 5,825,046 AEnergy Conversion Devices, Inc. · 1998
- Resistive random accress memory containing a conformal titanium aluminum carbide film and method of making330US 10,361,366 B2Tokyo Electron Limited · 2019
- Phase change memory cell and manufacturing method286US 7,688,619 B2Macronix International Co., Ltd. · 2010