Self-selecting memory device including chalcogenide material and method of manufacturing the same

A method of manufacturing a memory device, the method comprising:

• preparing a first electrode;
• forming a first buffer layer on the first electrode;
• forming a chalcogenide structure having ovonic threshold switching characteristics on the first buffer layer;
• forming a second buffer layer on the chalcogenide structure;
• and
• forming a second electrode on the second buffer layer,
• wherein the forming of the chalcogenide structure comprises:
• depositing a chalcogenide layer to form a deposited chalcogenide layer;
• and
• performing an ultraviolet treatment on the deposited chalcogenide layer, and
• wherein the depositing of the chalcogenide layer and the performing of the ultraviolet treatment are repeatedly performed until the chalcogenide structure has a predetermined thickness.

A method of manufacturing a memory device, the method comprising:

• preparing a first electrode;
• forming a first buffer layer on the first electrode;
• forming a chalcogenide structure on the first buffer layer;
• forming a second buffer layer on the chalcogenide structure;
• and
• forming a second electrode on the second buffer layer,
• wherein the chalcogenide structure comprises a plurality of chalcogenide layers, and
• each of the plurality of chalcogenide layers is ultraviolet treated and has a thickness of about 0.1 nm to about 10 nm in a direction in which the second electrode is stacked on the first electrode.