H10N 70/043
By implantation
Official title: {by implantation}
H10N70/043 (By implantation) appears on 297 US grants and 349 published applications in this corpus.
Search patents in H10N- Granted patents
- 297
- Published applications
- 349
- Assignees
- 83
- Inventors
- 484
- Latest grant
- 30 Dec 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 2 |
| 2003 | 0 | 0 |
| 2004 | 1 | 6 |
| 2005 | 2 | 2 |
| 2006 | 7 | 8 |
| 2007 | 4 | 11 |
| 2008 | 4 | 10 |
| 2009 | 2 | 17 |
| 2010 | 14 | 16 |
| 2011 | 16 | 23 |
| 2012 | 20 | 32 |
| 2013 | 27 | 23 |
| 2014 | 32 | 34 |
| 2015 | 26 | 21 |
| 2016 | 26 | 22 |
| 2017 | 26 | 19 |
| 2018 | 15 | 10 |
| 2019 | 13 | 16 |
| 2020 | 14 | 15 |
| 2021 | 12 | 15 |
| 2022 | 10 | 7 |
| 2023 | 7 | 10 |
| 2024 | 7 | 8 |
| 2025 | 8 | 9 |
| 2026 | 0 | 13 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Dopant-modulated etching for memory devices30 Dec 2025US 12,514,138 B2Micron Technology, Inc.
- Semiconductor device and method for fabricating the same9 Dec 2025US 12,495,724 B2SK hynix Inc.
- Semiconductor device and method for fabricating the same11 Nov 2025US 12,471,291 B2SK hynix Inc.
- Phase-change memory cell with reduced heater size11 Nov 2025US 12,471,506 B2International Businesss Machines Corporation
- Method for manufacturing an OxRAM-type resistive memory cell and associated OxRAM-type memory cell9 Sep 2025US 12,414,485 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Dopant-modulated etching for memory devices25 Jun 2026US 2026/0182256 A1Micron Technology, Inc.
- Method for manufacturing an array including at least two memory cells and array therefor25 Jun 2026US 2026/0182272 A1
- Semiconductor device and method for fabricating the same11 Jun 2026US 2026/0164671 A1SK hynix Inc.
- Semiconductor device and method for fabricating the same11 Jun 2026US 2026/0165039 A1SK hynix Inc.
- Semiconductor device and method for fabricating the same4 Jun 2026US 2026/0157120 A1SK hynix Inc.
Most cited
By later US patents
- Phase change memory cell and manufacturing method286US 7,688,619 B2Macronix International Co., Ltd. · 2010
- Cross point memory array using multiple thin films260US 6,753,561 B1Unity Semiconductor Corporation · 2004
- Multilevel phase-change memory element and operating method118US 7,254,059 B2Industrial Technology Research Institut · 2007
- Reversibly programmable polycrystalline silicon memory element117US 4,420,766 AHarris Corporation · 1983
- Conductive memory device with conductive oxide electrodes107US 7,067,862 B2Unity Semiconductor Corporation · 2006