Dopant-modulated etching for memory devices
AssigneeMicron Technology, Inc.
InventorsInnocenzo Tortorelli, Mattia Robustelli
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Abstract
Methods and devices based on the use of dopant-modulated etching are described. During fabrication, a memory storage element of a memory cell may be non-uniformly doped with a dopant that affects a subsequent etching rate of the memory storage element. After etching, the memory storage element may have an asymmetric geometry or taper profile corresponding to the non-uniform doping concentration. A multi-deck memory device may also be formed using dopant-modulated etching. Memory storage elements on different memory decks may have different taper profiles and different doping gradients.
Claims19
A method, comprising:
- doping a first memory storage element of a first memory cell with a first gradient of a dopant;
- and
- etching the first memory storage element to form a first taper of the first memory cell, wherein the first gradient of the dopant affects an etching rate of the first memory cell, and wherein the first taper is based at least in part on the first gradient of the dopant.
A method, comprising:
- doping a first memory storage element of a first memory cell with a first gradient and a second gradient of a dopant;
- and
- etching the first memory storage element to form a first taper and a second taper of the first memory cell, wherein the first gradient and the second gradient of the dopant affect an etching rate of the first memory cell, and wherein the first taper and the second taper are respectively based at least in part on the first gradient and the second gradient of the dopant.
Dependencies are inferred from the claim text.