Semiconductor device and method for fabricating the same
AssigneeSK hynix Inc.
InventorsJeong Myeong KIM, Cha Deok DONG, Keo Rock CHOI
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Abstract
A semiconductor device and a method for fabricating the semiconductor device are provided. The semiconductor device includes a plurality of memory cells, wherein each of the memory cells includes a memory layer; a selector layer configured to select the memory layer and formed in a portion of the memory layer, wherein the selector layer includes an amorphous silicon layer having a dopant including a Group-13 element and a Group-15 element of a periodic table; and an oxide layer disposed over the selector layer and formed by oxidizing at least a portion of the selector layer.
Claims23
A semiconductor device, comprising:
- a plurality of memory cells,
- wherein each of the memory cells includes
- a memory layer;
- a selector layer configured to select the memory layer, wherein the selector layer includes an amorphous silicon layer having a dopant including a Group-13 element and a Group-15 element of a periodic table;
- and
- an oxide layer disposed over the selector layer and formed by oxidizing at least a portion of the selector layer.
A method for fabricating a semiconductor device including a selector layer in a memory cell among a plurality of arrayed memory cells to control electrical access to the memory cell, comprising:
- forming, over a substrate, an amorphous silicon layer having at least one dopant as the selector layer;
- oxidizing at least a portion of the selector layer, by performing an oxygen plasma treatment, to form an oxide layer over the selector layer;
- and
- performing a heat treatment at a temperature less than or equal to a temperature where the amorphous silicon layer is crystallized.
Dependencies are inferred from the claim text.