US 12,471,506 B2Granted

Phase-change memory cell with reduced heater size

AssigneeInternational Businesss Machines Corporation

InventorKangguo Cheng

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Abstract

A phase-change memory device with reduced heater size includes a first conductive structure within a first dielectric layer. A heater element is located within a second dielectric layer disposed above the first conductive structure. The heater element includes a third dielectric layer defining a perimeter, a top portion of a heater material layer partially overlapping the perimeter of the third dielectric layer, and a bottom portion of the heater material layer overlapping the perimeter of the third dielectric layer. The bottom portion of the heater material layer is in contact with the first conductive structure. A phase-change material is located above the heater element with a bottom surface of the phase-change material being in contact with the top portion of the heater material layer. The phase-change memory device further includes a second conductive structure located above the phase-change material.

Claims18

Dependent claims

A memory device, comprising:

a first conductive structure within a first dielectric layer;
a heater element within a second dielectric layer disposed above the first conductive structure, the heater element including a third dielectric layer defining a perimeter, a top portion of a heater material layer partially overlapping the perimeter of the third dielectric layer, and a bottom portion of the heater material layer overlapping the perimeter of the third dielectric layer, the bottom portion of the heater material layer being in contact with the first conductive structure, wherein the top portion of the heater material layer has a partial ring shape and the bottom portion of the heater material layer has a full ring shape;
a phase-change material being positioned above the heater element, a partial ring shape portion of the top portion of the heater material layer being in contact with a bottom surface of the phase-change material, wherein the phase-change material is doped with at least one dielectric material;
and
a second conductive structure being positioned above the phase-change material.

2 more elements

A method of forming a memory device, comprising:

forming a first conductive structure within a first dielectric layer;
forming a heater element within a second dielectric layer disposed above the first conductive structure, the heater element including a third dielectric layer defining a perimeter, a top portion of a heater material layer partially overlapping the perimeter of the third dielectric layer, and a bottom portion of the heater material layer overlapping the perimeter of the third dielectric layer, the bottom portion of the heater material layer being in contact with the first conductive structure, wherein the top portion of the heater material layer has a partial ring shape and the bottom portion of the heater material layer has a full ring shape;
forming a phase-change material above the heater element, a partial ring shape portion of the top portion of the heater material layer being in contact with a bottom surface of the phase-change material;
doping the phase-change material with at least one dielectric material;
and
forming a second conductive structure above the phase-change material.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application: 17/654,269Filed 10 Mar 2022
Published: US 2023/0292637 A114 Sep 2023
Granted: 11 Nov 2025
Term ends: Not estimatedThe source records don’t support an estimate.

Classification15 codes

H10B 63/10
Resistance change memory devices, e.g. resistive RAM [ReRAM] devices: phase change RAM [PCRAM, PRAM] devices
H10N 70/231
Multistable switching devices, e.g. memristors: based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
H10N 70/826
Device geometry: adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
H10N 70/8413
Electrodes: adapted for resistive heating