Semiconductor device and method for fabricating the same

A method for fabricating a semiconductor device comprising:

• forming trenches on a dielectric material formed over a substrate;
• forming first conductive lines in the trenches such that first conductive lines and first dielectric layers are arranged over the substrate;
• forming partition layers over the first dielectric layers at a first center-to-center distance between adjacent first dielectric layers, wherein the first center-to-center distance is twice a center-to-center distance between adjacent first conductive lines, and wherein the partition layers include a dielectric material;
• forming a dielectric material layer to be formed as a selector layer over the first conductive lines, the first dielectric layers and the partition layers;
• and
• forming an initial selector layer by performing a first ion implantation of a dopant into the dielectric material layer at a first tilt angle and by performing a second ion implantation of the dopant into the dielectric material layer at a second tilt angle,
• wherein the first tilt angle is in an opposite direction to the second tilt angle with respect to a line perpendicular to surfaces of the layers, and
• the initial selector layer has a uniform dopant profile.