Method for manufacturing an OxRAM-type resistive memory cell and associated OxRAM-type memory cell

A method for manufacturing an OxRAM-type resistive memory cell, comprising:

• forming a titanium nitride lower electrode,
• firstly implanting silicon atoms into the lower electrode with a first implantation dose of silicon and a first implantation acceleration voltage, said first implantation dose of silicon being strictly positive and strictly lower than 0.7×1014 cm−2
• secondly implanting silicon atoms into the lower electrode with a second implantation dose of silicon and a second implantation acceleration voltage strictly greater than the first implantation acceleration voltage, said second implantation dose of silicon being strictly positive and strictly lower than 0.6·1014 cm−2
• the first and second acceleration voltages being selected to have an implantation profile following the first and second implantations having a maximum silicon concentration at a depth of between 1 and 3 nm from the upper surface of the lower electrode,
• depositing an active layer onto the lower electrode implanted, and
• depositing an upper electrode onto the active layer.