Semiconductor device and method for fabricating the same
AssigneeSK hynix Inc.
InventorTae Jung HA
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Abstract
Semiconductor devices and fabrication methods of semiconductor devices are disclosed. In an embodiment, a semiconductor device may include a plurality of memory cells, and each of the plurality of memory cells may include: a resistive layer including a material having a specific resistance and including a lower portion and an upper portion disposed over the lower portion, wherein a width of the lower portion is smaller than a width of an uppermost surface of the upper portion; a selector layer disposed over the resistive layer and structured to perform a threshold switching by exhibiting different electrically conductive states in response to an applied voltage relative to a threshold voltage; and a memory layer disposed over the selector layer and structured to store data.
Claims9
A semiconductor device comprising a plurality of memory cells, each of the plurality of memory cells comprising:
- a resistive layer including a material having a specific resistance and including a lower portion and an upper portion disposed over the lower portion, wherein a width of the lower portion is smaller than a width of an uppermost surface of the upper portion;
- a selector layer disposed over the resistive layer and structured to perform a threshold switching by exhibiting different electrically conductive states in response to an applied voltage relative to a threshold voltage;
- and
- a memory layer disposed over the selector layer and structured to store data,
- wherein the resistive layer is formed of a single layer such that the lower portion and the upper portion of the resistive layer include a same material.
Dependencies are inferred from the claim text.