Metal-oxide infiltrated organic-inorganic hybrid resistive random-access memory device

A resistive random access memory (RRAM) array, comprising:

• a plurality of memory cells, each of at least a subset of the memory cells comprising a nanocomposite thin film layer of SU-8:AgClO4 as a matrixed base layer that is infiltrated with inorganic metal oxide molecules, wherein the inorganic metal oxide molecules form a network in the matrixed base layer that is configured to control resistive switching characteristics as a function of corresponding changes in a concentration of AgClO4 salt in the matrixed base layer to meet prescribed switching parameters of the RRAM device, and wherein a variation of switching parameters associated with the RRAM device is controlled as a function of an amount of metal oxide molecules in the matrixed SU-8:AgClO4 base layer.

A memory device for low-power neuromorphic computing applications, the memory device comprising:

• a plurality of resistive random access memory (RRAM) cells, each of at least a subset of the RRAM cells including a SU-8:AgClO4 matrix base layer configured to regulate resistive switching characteristics in the cell by changing a quantity of AgClO4 salt concentration in the SU-8:AgClO4 matrix base layer, wherein variation of switching parameters of the plurality of RRAM cells is reduced by incorporating a molecular AlOx network in the SU-8:AgClO4 matrix base layer.