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US 2026/0047352 A1Published application
Resistive random access memory and method of forming the same
AssigneeUnited Microelectronics Corp.
InventorsShih-Ming Lin, Yang-Ju Lu, Yu-Lung Shih
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Abstract
A resistive random access memory and a method of forming the same are provided. The resistive random access memory includes a first electrode, a resistance switch layer located on the first electrode, a second electrode located on the resistance switch layer, and a plurality of nanoparticles located between the resistance switch layer and the second electrode.
Claims20
A resistive random access memory, comprising:
- a first electrode;
- a resistance switch layer located on the first electrode;
- a second electrode located on the resistance switch layer;
- and
- a plurality of nanoparticles located between the resistance switch layer and the second electrode.
2 more elements
A method of forming a resistive random access memory, comprising:
- forming a first electrode;
- forming a resistance switch layer on the first electrode;
- sequentially forming a metal film and an oxide sacrificial layer on the resistance switch layer;
- performing a heat treatment to form the oxide sacrificial layer into an oxide layer and forming the metal film into a plurality of nanoparticles at an interface between the resistance switch layer and the oxide layer;
- removing the oxide layer;
- and
- forming a second electrode on the resistance switch layer and the plurality of nanoparticles.
4 more elements
Dependencies are inferred from the claim text.