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US 2024/0347480 A1Published application
Physical unclonable functions with copper-silicon oxide programmable metallization cells
OwnerMichael KOZICKI, Wenhao CHENinventors
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Abstract
A physical unclonable functions (PUF) device including a first copper electrode, a second electrode, and a silicon oxide layer positioned directly between the first copper electrode and the second electrode; a method of producing a PUF device; an array comprising a PUF device; and a method of generating a secure key with a plurality of PUF devices.
Claims14
1-13. (canceled)
An array comprising:
- a plurality of complementary metal-oxide-semiconductor (CMOS) transistors;
- and
- a plurality of PUF devices each comprising
- a first copper electrode,
- a second electrode, and
- a layer of silicon oxide positioned directly between the first copper electrode and the second electrode;
- wherein the plurality of PUF devices are positioned above the plurality of CMOS transistors.
4 more elements
-34. (canceled)
Dependencies are inferred from the claim text.