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US 12,193,340 B2Granted
Switching element and memory device
AssigneeKioxia Corporation
InventorsTaichi Igarashi, Yuichi Ito, Eiji Kitagawa
Life of this patent
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Abstract
A switching element includes a first electrode, a second electrode, and a switching material layer provided between the first electrode and the second electrode. The switching material layer contains silicon (Si), oxygen (O), arsenic (As), and a predetermined element selected from lead (Pb), silver (Ag), indium (In), tin (Sn), copper (Cu), zinc (Zn), gallium (Ga), germanium (Ge), selenium (Se), antimony (Sb), tellurium (Te), gold (Au) and bismuth (Bi).
Claims10
A switching element comprising:
- a first electrode;
- a second electrode;
- and
- a switching material layer provided between the first electrode and the second electrode,
- wherein
- the switching material layer contains silicon (Si), oxygen (O), arsenic (As), and a predetermined element selected from lead (Pb), silver (Ag), indium (In), tin (Sn), copper (Cu), zinc (Zn), gallium (Ga), germanium (Ge), selenium (Se), antimony (Sb), tellurium (Te), gold (Au) and bismuth (Bi),
- arsenic (As) contained in the switching material layer forms a plurality of cluster regions, and
- silicon (Si) and oxygen (O) contained in the switching material layer form an insulating region.
5 more elements
Dependencies are inferred from the claim text.