Integrated circuit device and fabrication using metal-doped chalcogenide materials

A method of forming a chalcogenide memory element having a first electrode, a second electrode, and a doped chalcogenide layer interposed between the first electrode and the second electrode, the method comprising:

• forming a chalcogenide layer on the first electrode;
• sputtering metal onto the chalcogenide layer using a first plasma containing at least one component gas selected from the group consisting of neon and helium, thereby forming the doped chalcogenide layer;
• and
• sputtering metal onto the doped chalcogenide layer using a second plasma containing at least argon, thereby forming the second electrode.

A method of forming a chalcogenide memory element having a first electrode, a second electrode, and a doped chalcogenide layer interposed between the first electrode and the second electrode, the method comprising:

• forming a chalcogenide layer on the first electrode;
• sputtering metal onto the chalcogenide layer using a plasma containing at least one component gas selected from the group consisting of neon and helium, thereby forming the doped chalcogenide layer;
• and
• sputtering metal onto the doped chalcogenide layer using the plasma, thereby forming the second electrode.

A method of forming a chalcogenide memory element having a first electrode, a second electrode, and a doped chalcogenide layer interposed between the first electrode and the second electrode, the method comprising:

• forming a chalcogenide layer on the first electrode;
• sputtering metal onto the chalcogenide layer using a plasma initially generated from feed gas containing at least one component gas selected from the group consisting of neon and helium, thereby forming the doped chalcogenide layer;
• increasing an average atomic weight of the feed gas used to generate the plasma;
• and
• sputtering metal onto the doped chalcogenide layer using the plasma generated from the feed gas having the increased average atomic weight, thereby forming the second electrode.

A method of forming a chalcogenide memory element having a first electrode, a second electrode, and a doped chalcogenide layer interposed between the first electrode and the second electrode, the method comprising:

• forming a chalcogenide layer on the first electrode;
• sputtering metal onto the chalcogenide layer using a first plasma in a deposition chamber to form the doped chalcogenide layer, wherein the first plasma is generated using at least one component gas selected from the group consisting of neon and helium;
• and
• sputtering metal onto the doped chalcogenide layer using a second plasma in the deposition chamber to form the second electrode, wherein the second plasma is generated using at least one component gas having an atomic weight higher than an atomic weight of neon.

A method of forming a chalcogenide memory element having a first electrode, a second electrode, and a doped chalcogenide layer interposed between the first electrode and the second electrode, the method comprising:

• forming a chalcogenide layer on the first electrode;
• sputtering silver onto the chalcogenide layer using a first plasma generated from a feed gas consisting essentially of neon, thereby forming the doped chalcogenide layer;
• and
• sputtering a metal onto the doped chalcogenide layer using a second plasma generated from a feed gas consisting essentially of argon, thereby forming the second electrode, wherein the second electrode has a different work function (Φm) than the first electrode.

A method of forming a chalcogenide memory element having a first electrode, a second electrode, and a doped chalcogenide layer interposed between the first electrode and the second electrode, the method comprising:

• forming a chalcogenide layer on the first electrode;
• sputtering silver onto the chalcogenide layer using a first plasma consisting essentially of neon, thereby forming the doped chalcogenide layer;
• and
• sputtering silver onto the doped chalcogenide layer using a second plasma consisting essentially of argon, thereby forming the second electrode.