H10N 52/01
Manufacture or treatment
H10N52/01 (Manufacture or treatment) appears on 404 US grants and 474 published applications in this corpus.
Search patents in H10N- Granted patents
- 404
- Published applications
- 474
- Assignees
- 144
- Inventors
- 709
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 3 | 0 |
| 1990 | 2 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 1 | 0 |
| 2001 | 1 | 0 |
| 2002 | 0 | 1 |
| 2003 | 2 | 1 |
| 2004 | 0 | 0 |
| 2005 | 1 | 5 |
| 2006 | 0 | 3 |
| 2007 | 3 | 1 |
| 2008 | 1 | 2 |
| 2009 | 0 | 2 |
| 2010 | 2 | 4 |
| 2011 | 0 | 5 |
| 2012 | 3 | 4 |
| 2013 | 6 | 7 |
| 2014 | 8 | 31 |
| 2015 | 17 | 23 |
| 2016 | 27 | 24 |
| 2017 | 28 | 33 |
| 2018 | 29 | 33 |
| 2019 | 35 | 46 |
| 2020 | 30 | 44 |
| 2021 | 33 | 29 |
| 2022 | 31 | 47 |
| 2023 | 41 | 55 |
| 2024 | 39 | 36 |
| 2025 | 43 | 24 |
| 2026 | 11 | 14 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Memory device including bottom electrode bridges and method of manufacture22 Sep 2026US 12,745,572 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Low-magnetic-field gallium arsenide quantum hall resistance sample and preparation thereof16 Jun 2026US 12,660,512 B2Beijing Orient Institute of Measurement and Test
- Memory device and manufacturing method thereof2 Jun 2026US 12,648,365 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Magnetization rotational element and magnetoresistive effect element19 May 2026US 12,635,420 B2TDK Corporation
- Method of forming a hall sensor with performance control19 May 2026US 12,635,421 B2Texas Instruments Incorporated
- Memory device and manufacturing method thereof17 Sep 2026US 2026/0282759 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for manufacturing gaas hall sensor17 Sep 2026US 2026/0282760 A1TDK-Micronas GmbH
- Precise spatial photodoping of lateral graphene interfaces10 Sep 2026US 2026/0271624 A1University of Maryland, College Park
- Anomalous hall effect (ahe)-based read out of logic devices based on interlayer exchange coupling18 Jun 2026US 2026/0173768 A1Intel Corporation
- A method of producing an electronic device precursor18 Jun 2026US 2026/0173769 A1Paragraf Limited
Most cited
By later US patents
- Methods and apparatus for magnetic sensor having non-conductive die paddle63US 8,629,539 B2Allegro MicroSystems, LLC · 2014
- Method of making a Hall effect device54US 4,398,342 AInternational Standard Electric Corporation · 1983
- Packaging for an electronic device30US 9,190,606 B2Allegro Micosystems, LLC · 2015
- Methods and apparatus for magnetic sensor having non-conductive die paddle28US 9,299,915 B2Allegro MicroSystems, LLC · 2016
- Spin current magnetization rotational element, magnetoresistance effect element and magnetic memory22US 10,490,731 B2TDK Corporation · 2019