METHOD FOR MANUFACTURING GaAs HALL SENSOR

Method for manufacturing a Hall sensor comprising GaAs, with

• a semiconductor wafer made of GaAs formed as a substrate with a top and a bottom and a first lattice constant and a first bandgap,
• a process step on the top of the GaAs substrate, in which a III-V insulation layer with the first lattice constant is produced by means of an epitaxy process,
• a process step on the insulation layer, in which a GaAs semiconductor layer with the first lattice constant and an n-doping is grown using an epitaxy process,
• a process step, in which a shielding layer comprising n-doped GaAs is formed epitaxially with the semiconductor layer, wherein the doping of the shielding layer is higher than the doping of the semiconductor layer and the shielding layer has a thickness at least 10 times lower than the semiconductor layer,
• a process step, in which a plurality of masked first regions are created by means of a masking process, wherein at least some of the first regions are completely enclosed by strip-shaped mask-free second regions, wherein a vertical insulation layer is created in the second regions with one or more subsequent process steps,
• a process step in which contacts are formed in at least some of the first regions in order to operate the semiconductor layer in the first regions as a Hall sensor,
• a flat top of the semiconductor layer after the formation of the contacts, in a region comprising at least two adjacent first regions electrically insulated from each other by second regions,
• the condition that the aforementioned process steps are executed in the specified order.