Memory device and manufacturing method thereof

A memory device, comprising:

• a first electrode over a substrate;
• a spin Hall electrode (SHE) on the first electrode, the SHE comprising an alloy including a heavy metal element and a light transition metal element, wherein the heavy metal element comprises platinum (Pt) and the light transition metal element comprises vanadium (V) or chromium (Cr), wherein the alloy is PtxCr1-x or PtyV1-y, wherein the x ranges from greater than 0.5 to 0.8, and the y ranges from 0.7 to 0.9, wherein the SHE has a major axis along which a write path is directed;
• a magnetic tunnel junction (MTJ) on the SHE;
• and
• a second electrode on the MTJ.

A memory device, comprising:

• a first electrode over a substrate;
• a spin Hall electrode (SHE) on the first electrode, the SHE comprising an alloy including a heavy metal element and a light transition metal element, wherein the heavy metal element comprises platinum or palladium, and the light transition metal element comprises vanadium, chromium, manganese, iron, cobalt, nickel, or copper;
• a magnetic tunnel junction (MTJ) on the SHE;
• a second electrode on the MTJ;
• and
• wherein the SHE has a spin Hall angle equal to or greater than 0.1 and an electrical resistivity equal to or lower than 600 μΩ·cm, wherein a shunting ratio of the memory device is between 0.04 and 0.9.