Anomalous hall effect (ahe)-based read out of logic devices based on interlayer exchange coupling

A transistor device comprising:

• an input portion comprising:
• a magnetoelectric (ME) material layer;
• and
• a first ferromagnetic (FM) material layer on the ME material layer, the first FM material layer comprising an in-plane magnetic anisotropy (IMA) ferromagnet material;
• an output portion comprising:
• a metal layer;
• and
• a second FM material layer on the metal layer, the second FM material layer comprising a perpendicular magnetic anisotropy (PMA) ferromagnet material;
• and
• an anti-ferromagnetic material between the input portion and the output portion.

A device comprising:

• a transistor comprising:
• a magnetoelectric (ME) material layer;
• a first ferromagnetic (FM) material layer on the ME material layer, the first FM material layer comprising an in-plane magnetic anisotropy (IMA) ferromagnet material;
• an anti-ferromagnetic layer on the first FM material layer;
• and
• a Hall cross structure on the anti-ferromagnetic layer, the Hall cross structure comprising a metal layer and a second FM material layer, the second FM material layer comprising a perpendicular magnetic anisotropy (PMA) ferromagnet material.