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US 2026/0271624 A1Published application
Precise spatial photodoping of lateral graphene interfaces
AssigneeUniversity of Maryland, College Park
InventorsSon Truong Le, Thuc T. Mai, Maria F. Munoz, Angela R. High Walker, Curt A. Richter, Aubrey T. Hanbicki, Adam L. Friedman
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Abstract
Semiconductor devices and methods of doping. The methods include providing a first insulating layer, a second insulating layer, and a semiconductor layer disposed between the first insulating layer and the second insulating layer. The methods include biasing the semiconductor layer and irradiating the first insulating layer, the semiconductor layer and the second insulating layer with an irradiation source.
Claims20
A method for doping, comprising:
- providing a first insulating layer;
- providing a second insulating layer;
- providing a semiconductor layer disposed between the first insulating layer and the second insulating layer;
- biasing a back gate while keeping the semiconductor layer grounded;
- and
- irradiating the first insulating layer, the semiconductor layer and the second insulating layer with an irradiation source.
3 more elements
A doped device, comprising:
- a first insulating layer;
- a second insulating layer;
- and
- a semiconductor layer disposed between the first insulating layer and the second insulating layer;
- wherein a bias is applied to a back gate with the semiconductor layer grounded and an irradiation source is applied to the first insulating layer, the grounded semiconductor layer and the second insulating layer.
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A device, comprising:
- a first Van der Waals (vdW) insulating layer;
- a second Van der Waals (vdW) insulating layer;
- and
- a Van der Waals (vdW) semiconductor layer disposed between the first vdW insulating layer and the second vdW insulating layer,
- wherein a bias is applied to a back gate while the vdW semiconductor conduction channel is grounded and an irradiation source is applied to the first vdW insulating layer, the vdW semiconductor layer and the second vdW insulating layer to generate remote dopants for the vdW semiconductor conduction channel.
2 more elements
Dependencies are inferred from the claim text.