H10N 52/00
Hall-effect devices
Official title: Hall-effect devices (integrated devices or assemblies of multiple devices H10N59/00)
H10N52/00 (Hall-effect devices) appears on 1,111 US grants and 1,178 published applications in this corpus.
Search patents in H10N- Granted patents
- 1,111
- Published applications
- 1,178
- Assignees
- 362
- Inventors
- 1,860
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 6 | 0 |
| 1977 | 7 | 0 |
| 1978 | 2 | 0 |
| 1979 | 3 | 0 |
| 1980 | 4 | 0 |
| 1981 | 4 | 0 |
| 1982 | 1 | 0 |
| 1983 | 4 | 0 |
| 1984 | 6 | 0 |
| 1985 | 2 | 0 |
| 1986 | 4 | 0 |
| 1987 | 9 | 0 |
| 1988 | 4 | 0 |
| 1989 | 5 | 0 |
| 1990 | 9 | 0 |
| 1991 | 5 | 0 |
| 1992 | 6 | 0 |
| 1993 | 3 | 0 |
| 1994 | 2 | 0 |
| 1995 | 5 | 0 |
| 1996 | 4 | 0 |
| 1997 | 7 | 0 |
| 1998 | 3 | 0 |
| 1999 | 2 | 0 |
| 2000 | 5 | 0 |
| 2001 | 1 | 0 |
| 2002 | 9 | 2 |
| 2003 | 6 | 5 |
| 2004 | 10 | 17 |
| 2005 | 9 | 16 |
| 2006 | 7 | 10 |
| 2007 | 12 | 9 |
| 2008 | 2 | 8 |
| 2009 | 6 | 11 |
| 2010 | 8 | 22 |
| 2011 | 9 | 18 |
| 2012 | 15 | 15 |
| 2013 | 15 | 26 |
| 2014 | 21 | 49 |
| 2015 | 41 | 47 |
| 2016 | 56 | 47 |
| 2017 | 56 | 76 |
| 2018 | 56 | 89 |
| 2019 | 94 | 127 |
| 2020 | 109 | 124 |
| 2021 | 89 | 89 |
| 2022 | 93 | 97 |
| 2023 | 78 | 114 |
| 2024 | 83 | 70 |
| 2025 | 75 | 55 |
| 2026 | 39 | 35 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- High voltage devices with multiple polyimide layers29 Sep 2026US 12,751,213 B2Texas Instruments Incorporated
- Memory device including bottom electrode bridges and method of manufacture22 Sep 2026US 12,745,572 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Sensor based on direct spin hall effect15 Sep 2026US 12,740,325 B2Western Digital Technologies, Inc.
- Packaged current sensor integrated circuit8 Sep 2026US 12,733,512 B2Allegro MicroSystem, LLC
- Magnetic sensor, magnetic head and magnetic recording device25 Aug 2026US 12,721,047 B2Kabushiki Kaisha Toshiba
- Hall sensor8 Oct 2026US 2026/0309815 A1Cirrus Logic International Semiconductor Ltd.
- Van der waals moiré homobilayer for gate-tunable fractional quantum anomalous hall state1 Oct 2026US 2026/0305183 A1University of Washington
- Magnetoresistance effect element and magnetic memory24 Sep 2026US 2026/0293531 A1TDK Corporation
- Semiconductor device, storage device, and electronic device17 Sep 2026US 2026/0282757 A1Semiconductor Energy Laboratory Co.Ltd.
- Memory device and manufacturing method thereof17 Sep 2026US 2026/0282759 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Hall sensor with integrated pole pieces129US 4,772,929 ASprague Electric Company · 1988
- Semiconductor sensors and method for fabricating the same121US 5,453,727 AAsahi Kasai Kogyo Kabushiki Kaisha · 1995
- Arrangements for an integrated sensor119US 7,768,083 B2Allegro MicroSystems, LLC · 2010
- Hybrid hall effect device and method of operation115US 5,652,445 A1997
- Hall sensing apparatus107US 4,283,643 AElectric Power Research Institute, Inc. · 1981