H10N 52/101
Semiconductor hall-effect devices
Official title: {Semiconductor Hall-effect devices}
H10N52/101 (Semiconductor hall-effect devices) appears on 483 US grants and 490 published applications in this corpus.
Search patents in H10N- Granted patents
- 483
- Published applications
- 490
- Assignees
- 186
- Inventors
- 889
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 3 | 0 |
| 1978 | 1 | 0 |
| 1979 | 1 | 0 |
| 1980 | 2 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 2 | 0 |
| 1987 | 4 | 0 |
| 1988 | 2 | 0 |
| 1989 | 2 | 0 |
| 1990 | 5 | 0 |
| 1991 | 4 | 0 |
| 1992 | 4 | 0 |
| 1993 | 1 | 0 |
| 1994 | 2 | 0 |
| 1995 | 5 | 0 |
| 1996 | 4 | 0 |
| 1997 | 7 | 0 |
| 1998 | 2 | 0 |
| 1999 | 1 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 5 | 0 |
| 2003 | 3 | 3 |
| 2004 | 6 | 6 |
| 2005 | 3 | 2 |
| 2006 | 0 | 6 |
| 2007 | 3 | 4 |
| 2008 | 1 | 2 |
| 2009 | 3 | 4 |
| 2010 | 6 | 16 |
| 2011 | 6 | 8 |
| 2012 | 9 | 9 |
| 2013 | 9 | 20 |
| 2014 | 15 | 24 |
| 2015 | 19 | 27 |
| 2016 | 35 | 30 |
| 2017 | 33 | 40 |
| 2018 | 37 | 45 |
| 2019 | 38 | 44 |
| 2020 | 40 | 48 |
| 2021 | 36 | 29 |
| 2022 | 31 | 22 |
| 2023 | 31 | 38 |
| 2024 | 20 | 20 |
| 2025 | 24 | 26 |
| 2026 | 10 | 17 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Sensor based on direct spin hall effect15 Sep 2026US 12,740,325 B2Western Digital Technologies, Inc.
- 3D differential sensor16 Jun 2026US 12,656,420 B2Allegro MicroSystems, LLC
- Low-magnetic-field gallium arsenide quantum hall resistance sample and preparation thereof16 Jun 2026US 12,660,512 B2Beijing Orient Institute of Measurement and Test
- Method of forming a hall sensor with performance control19 May 2026US 12,635,421 B2Texas Instruments Incorporated
- Hall effect devices integrated with junction transistors31 Mar 2026US 12,593,616 B2Globalfoundries Singapore Pte. Ltd.
- Hall sensor8 Oct 2026US 2026/0309815 A1Cirrus Logic International Semiconductor Ltd.
- Van der waals moiré homobilayer for gate-tunable fractional quantum anomalous hall state1 Oct 2026US 2026/0305183 A1University of Washington
- Method for manufacturing gaas hall sensor17 Sep 2026US 2026/0282760 A1TDK-Micronas GmbH
- Gaas hall sensor17 Sep 2026US 2026/0282761 A1TDK-Micronas GmbH
- Precise spatial photodoping of lateral graphene interfaces10 Sep 2026US 2026/0271624 A1University of Maryland, College Park
Most cited
By later US patents
- Hall sensor with integrated pole pieces129US 4,772,929 ASprague Electric Company · 1988
- Semiconductor sensors and method for fabricating the same121US 5,453,727 AAsahi Kasai Kogyo Kabushiki Kaisha · 1995
- Arrangements for an integrated sensor119US 7,768,083 B2Allegro MicroSystems, LLC · 2010
- Hybrid hall effect device and method of operation115US 5,652,445 A1997
- Non-volatile magnetic random access memory106US 5,289,410 ACalifornia Institute of Technology · 1994