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US 12,593,616 B2Granted
Hall effect devices integrated with junction transistors
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsXinfu Liu, Wensheng Deng, Jason Kin Wei Wong, Qianqian Meng
Life of this patent
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Abstract
The disclosed subject matter relates generally to semiconductor devices. More particularly, the present disclosure relates to Hall effect devices integrated with junction transistors to achieve tunable parameters within the Hall effect devices. The present disclosure also relates to methods of forming the Hall effect devices.
Claims20
A Hall effect device comprising:
- a well region in a substrate, the well region has a first conductivity type;
- a channel region in the substrate, the channel region is over and in direct contact with the well region, the channel region has a second conductivity type, the second conductivity type is of an opposite conductivity type to the first conductivity type, the channel region includes a first vertical section, a second vertical section, and a horizontal section laterally between the first vertical section and the second vertical section, wherein the horizontal section of the channel region has a lower dopant concentration than the first vertical section of the channel region and the second vertical section of the channel region;
- a Hall active region in the substrate, the Hall active region is over and in direct contact with the channel region, the Hall active region has the same conductivity type as the well region, wherein the channel region is between the well region and the Hall active region, and wherein the first vertical section of the channel region and the second vertical section of the channel region are in direct contact with the Hall active region;
- and
- an isolation structure laterally enclosing the well region, the channel region, and the Hall active region, wherein the first vertical section of the channel region is laterally adjacent to and in direct contact with the isolation structure.
2 more elements
A Hall effect device comprising:
- a well region in a substrate, the well region has a first conductivity type, the well region has a horizontal section and a vertical section over the horizontal section, wherein the horizontal section of the well region has a lower dopant concentration than the vertical section of the well region;
- a channel region in the substrate, the channel region is over and in direct contact with the well region, the channel region includes a first vertical section, a second vertical section, and a horizontal section laterally between the first vertical section and the second vertical section, the channel region has a second conductivity type, the second conductivity type is of an opposite conductivity type to the first conductivity type, wherein the horizontal section of the well region is below the channel region, and the vertical section of the well region is laterally adjacent to the channel region;
- a Hall active region in the substrate, the Hall active region is over and in direct contact with the channel region, the Hall active region has the same conductivity type as the well region, wherein the channel region is between the well region and the Hall active region;
- and
- an isolation structure laterally enclosing the well region, the channel region, and the Hall active region, wherein the first vertical section of the channel region is laterally adjacent to and in direct contact with the isolation structure.
2 more elements
A Hall effect device comprising:
- a well region in a substrate, the well region has a first conductivity type and an upper surface;
- a channel region in the substrate, the channel region is over and in direct contact with the well region, the channel region has a second conductivity type, the second conductivity type is of an opposite conductivity type to the first conductivity type;
- a Hall active region in the substrate, the Hall active region is over and in direct contact with the channel region, the Hall active region has the same conductivity type as the well region, wherein the channel region is between the well region and the Hall active region;
- a first contact region in the Hall active region;
- a second contact region in the Hall active region;
- a supply contact region in the channel region;
- a sensing contact region in the channel region;
- and
- a control contact region in the upper surface of the well region, the control contact region directly contacts the well region.
6 more elements
Dependencies are inferred from the claim text.