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AssigneeAsahi Kasai Kogyo Kabushiki Kaisha
InventorsIchiro Shibasaki, Naohiro Kuze, Tatsuro Iwabuchi, Kazuhiro Nagase
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The present invention is a method of fabrication of a thin film of In.sub.x Ga.sub.1-x As.sub.y Sb.sub.1-y (0<x.ltoreq.1.0, 0.ltoreq.y.ltoreq.1.0) having no lattice disorder, and its use in a sensor layer to obtain a high sensitivity semiconductor sensor having excellent temperature characteristics. The semiconductor sensor has a high resistance first compound semiconductor layer, a layer of In.sub.x Ga.sub.1-x As.sub.y Sb.sub.1-y (0<x.ltoreq.1.0, 0.ltoreq.y.ltoreq.1.0) grown on this first layer, and an electrode formed on this layer. The first compound semiconductor layer has a lattice constant the same as or nearly the same as that of the crystal of the sensor layer, and a band gap energy greater than that of the crystal. A second compound semiconductor layer similar to the first compound semiconductor layer may be formed on top of the sensor layer. A manufacturing method of such a semiconductor sensor is also included.
A magnetic sensor, comprising:
A magnetic sensor, comprising:
A magnetic sensor, comprising a high resistance first compound semiconductor layer, a thin film layer of In.sub.x Ga.sub.1-x As.sub.y Sb.sub.1-y (0<x.ltoreq.1.0, 0.ltoreq.y<1.0) grown on said first compound semiconductor layer, and an electrode formed on said In.sub.x Ga.sub.1-x As.sub.y Sb.sub.1-y thin film layer, wherein said first compound semiconductor layer has a lattice constant the same as or nearly the same as that of the In.sub.x Ga.sub.1-x As.sub.y Sb.sub.1-y, and a band gap energy greater than that of the In.sub.x Ga.sub.1-x As.sub.y Sb.sub.1-y.
A method for producing a magnetic sensor comprising the steps of;
A method for producing a magnetic sensor comprising the steps of;
A method for producing a magnetic sensor comprising the steps of;
A hybrid magnetic sensor wherein a magnetic sensor comprising a high resistance first compound semiconductor layer in that, a thin film layer of In.sub.x Ga.sub.1-x As.sub.y Sb.sub.1-y (0<x.ltoreq.1.0, 0.ltoreq.y.ltoreq.1.0) grown on said first compound semiconductor layer, and an electrode formed on said In.sub.x Ga.sub.1-x As.sub.y Sb.sub.1-y thin film layer, wherein said first compound semiconductor layer has a lattice constant the same as or nearly the same as that of the In.sub.x Ga.sub.1-x As.sub.y Sb.sub.1-y, and a band gap energy greater than that of the In.sub.x Ga.sub.1-x As.sub.y Sb.sub.1-y, and a silicon monolithic integrated circuit chip are molded together in the same package.
A semiconductor optical sensor comprising a high resistance first compound semiconductor layer, a thin film layer of In.sub.x Ga.sub.1-x As.sub.y Sb.sub.1-y (0<x.ltoreq.1.0, 0.ltoreq.y.ltoreq.1.0) grown on said first compound semiconductor layer, and an electrode for detecting light formed on said In.sub.x Ga.sub.1-x As.sub.y Sb.sub.1-y thin film layer, wherein said first compound semiconductor layer has a lattice constant the same as or nearly the same as that of the In.sub.x Ga.sub.1-x As.sub.y Sb.sub.1-y, and a band gap energy greater than that of the In.sub.x Ga.sub.1-x As.sub.y Sb.sub.1-y.
A semiconductor pressure sensor comprising a high resistance first compound semiconductor layer, a thin film layer of In.sub.x Ga.sub.1-x As.sub.y Sb.sub.1-y (0<x.ltoreq.1.0, 0.ltoreq.y.ltoreq.1.0) grown on said first compound semiconductor layer, and an electrode for detecting pressure formed on said In.sub.x Ga.sub.1-x As.sub.y Sb.sub.1-y thin film layer, wherein said first compound semiconductor layer has a lattice constant the same as or nearly the same as that of the In.sub.x Ga.sub.1-x As.sub.y Sb.sub.1-y, and a band gap energy greater than that of the In.sub.x Ga.sub.1-x As.sub.y Sb.sub.1-y.
A semiconductor strain sensor comprising a high resistance first compound semiconductor layer, a thin film layer of In.sub.x Ga.sub.1-x As.sub.y Sb.sub.1-y (0<x.ltoreq.1.0, 0.ltoreq.y.ltoreq.1.0) grown on said first compound semiconductor layer, and an electrode for detecting strain formed on said In.sub.x Ga.sub.1-x As.sub.y Sb.sub.1-y thin film layer, wherein said first compound semiconductor layer has a lattice constant the same as or nearly the same as that of the In.sub.x Ga.sub.1-x As.sub.y Sb.sub.1-y, and a band gap energy greater than that of the In.sub.x Ga.sub.1-x As.sub.y Sb.sub.1-y.
Dependencies are inferred from the claim text.