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US 4,772,929 AGranted
Hall sensor with integrated pole pieces
AssigneeSprague Electric Company
InventorKenneth E. Manchester
Life of this patent
Estimating the term…
Abstract
A Hall element is formed in one surface of a silicon die. A trench is etched away in the opposite die surface in a region adjacent the Hall element. An insulating silicon dioxide is grown on both surfaces and a layer of ferromagnetic metal is deposited on both surfaces to form a pair of pole pieces intimately integrated with the Hall element.
Claims9
A Hall-effect magnetic-field sensor including integrated pole pieces comprising:
- (a) a semiconductor die;
- (b) a basic Hall element being formed in said semiconductor die at one surface thereof and being of the kind having a thin body with two sensing contact regions at opposite edges thereof;
- (c) a basic trench formed in the opposite surface of said die adjacent an inner-die portion of said Hall element;
- (d) a first layer of a high magnetic permeability material over said one surface of said die overlying said basic Hall element;
- and
- (e) a second layer of a high magnetic permeability material over said opposite die surface extending into said basic trench and lying adjacent to said inner-die portion of said basic Hall element, said first and second layers serving as two pole pieces intimately sandwiching said basic Hall element.
3 more elements
Dependencies are inferred from the claim text.