Van der waals moiré homobilayer for gate-tunable fractional quantum anomalous hall state

Abstract

Presented is an opto-electronic device that utilizes a semiconducting molybdenum ditelluride homobilayer in a rhombohedral stacked moiré superlattice as the active component. The semiconducting molybdenum ditelluride monolayers are arranged into a homobilayer moiré superlattice where the layers are rotated by between 2.5 to 4 degrees. The device is constructed from the molybdenum ditelluride homobilayer moiré superlattice. The homobilayers are sandwiched between few-layer flakes of hexagonal boron nitride and graphite. Fractional quantum anomalous Hall states result when the device is cooled below 4.5 Kelvin and gate voltages are applied. The described devices can be used for developing topological qubits towards error-immune quantum computing.

Dependencies are inferred from the claim text.